Leshan Radio Company

L2SA1037AKRLT1 Datasheet Preview

L2SA1037AKRLT1 Datasheet

General Purpose Transistors

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LESHAN RADIO COMPANY, LTD.

General Purpose Transistors

PNP Silicon

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BASE

COLLECTOR

EMITTER

MAXIMUM RATINGS

Rating

Symbol Value

Unit

Collector–Emitter Voltage

V CEO

Collector–Base Voltage

V CBO

Emitter–Base Voltage

V EBO

Collector Current — Continuous I C

Collector power dissipation

Junction temperature

Storage temperature

T stg

–50 V

–60 V

–6.0 V

–150

mAdc

0.2 W

150 °C

-55 ~+150 °C

DEVICE MARKING

L2SA1037AKQLT1 =FQ L2SA1037AKSLT1 =G3F L2SA1037AKRLT1 =FR

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)

Characteristic

Collector–Emitter Breakdown Voltage

(IC = –1 mA)

Emitter–Base Breakdown Voltage

(IE = – 50 µA)

Collector–Base Breakdown Voltage

(IC = – 50 µA)

Collector Cutoff Current

(VCB = – 60 V)

Emitter cutoff current

(VEB = – 6 V)

Collector-emitter saturation voltage

(IC/ IB = – 50 mA / – 5m A)

DC current transfer ratio

(V CE = – 6 V, I C= –1mA)

Transition frequency

(V CE = – 12 V, I E= 2mA, f=30MHz )

Output capacitance

(V CB = – 12 V, I E= 0A, f =1MHz )

Symbol

V (BR)CEO

V (BR)EBO

V (BR)CBO

I CBO

I EBO

V CE(sat)

h FE

C ob

Min

– 50

–6

– 60

—

120

—

h FE values are classified as follows:

hFE

120~270

180~390

270~560

L2SA1037AK*LT1

SOT– 23

Typ Max Unit

— —V

— – 0.1 µA

— -0.5 V

–– 560 ––

140 –– MHz

4.0 5.0 pF

LM35–1/3

Leshan Radio Company

L2SA1037AKRLT1 Datasheet Preview

L2SA1037AKRLT1 Datasheet

General Purpose Transistors

No Preview Available !

LESHAN RADIO COMPANY, LTD.

Fig.1 Grounded emitter propagation characteristics

–50

–20

–10

–50

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–2

–1

–0.5

T A = 100°C

25°C

– 40°C

V = –10 V

–0.2

–0.1

–0.2 –0.4 –0.6 –0.8 –1.0 –1.2 –1.4 –1.6

V BE , BASE TO EMITTER VOLTAGE(V)

Fig.3 Grounded emitter output characteristics( )

–100

T A = 25°C

500

–80 450

400

350

300

–60

–40

–20

–250

–200

–150

–100

–50 µA

0 I B =0

–1 –2

–3

–4 –5

V CE , COLLECTOR TO EMITTER VOLTAGE (V)

Fig.5 DC current gain vs. collector current ( )

500

T A = 100°C

25°C

–40°C

200

100

–0.2 –0.5 –1 –2

VCE= – 6V

–5 –10 –20

–50 –100

I , COLLECTOR CURRENT (mA)

L2SA1037AK*LT1

Fig.2 Grounded emitter output characteristics( )

–10

T A = 25°C

–35.0

–31.5

–8 –28.0

–24.5

–21.0

–6

–17.5

–14.0

–4

–10.5

–7.0

–2

–3.5µA

0 I B =0

–0.4 –0.8

–1.2

–1.6

–2.0

V CE , COLLECTOR TO EMITTER VOLTAGE (V)

Fig.4 DC current gain vs. collector current ( )

500

T A = 25°C

VCE= –5 V

–3V

–1V

200

100

–0.2 –0.5 –1 –2

–5 –10 –20

I C, COLLECTOR CURRENT (mA)

–50 –100

Fig.6 Collector-emitter saturation voltage vs.

collector current ( )

–1

T A = 25°C

–0.5

–0.2

–0.1

–0.05

I C /I B = 50

–0.2 –0.5 –1 –2

–5 –10 –20

I C, COLLECTOR CURRENT (mA)

–50 –100

LM35–2/3

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L2SA1037AKRLT1 Datasheet

General Purpose Transistors

L2SA1037AKRLT1 Datasheet

General Purpose Transistors

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