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Leshan Radio Company

L2SA2030M3T5G Datasheet Preview

L2SA2030M3T5G Datasheet

Low frequency transistor

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LESHAN RADIO COMPANY, LTD.
Low frequency transistor
The transistor of 500mA class which went only into 2125 size conventionally was attained in 1608 sizes or 1208 sizes.
zApplications
For switching, for muting.
PNP
zFeatures
1) A collector current is large.
2) Collector saturation voltage is low.
VCE (sat) 250mA
At IC = 200mA / IB = 10mA
3) We declare that the material of product compliance with RoHS requirements.
4 ) S- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
L2SA2030M3T5G
S-L2SA2030M3T5G
3
2
1
SOT –723
zAbsolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Symbol
VCBO
VCEO
VEBO
IC
ICP
Limits
15
12
6
500
1
Unit
V
V
V
mA
A
1
BASE
Collector power dissipation
PC
150 mW
Junction temperature
Storage temperature
Single pulse, Pw=1ms
Tj 150 °C
Tstg
55 to +150 °C
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Collector-base breakdown voltage BVCBO 15 − − V IC= −10µA
Collector-emitter breakdown voltage BVCEO 12 − − V IC= −1mA
Emitter-base breakdown voltage
BVEBO 6 − − V IE= −10µA
Collector cutoff current
ICBO − − −100 nA VCB= −15V
Emitter cutoff current
IEBO − − −100 nA VEB= −6V
DC current transfer ratio
hFE 270 680 VCE= −2V / IC= −10mA
Collector-emitter saturation voltage VCE (sat) − −100 250 mV IC= −200mA / IB= −10mA
Transition frequency
fT 260 MHz VCE= −2V, IE=10mA, fT=100MHz
Output capacitance
Cob 6.5 pF VCB= −10V, IE=0A, f=1MHz
3
COLLECTOR
2
EMITTER
z Device marking and ordering information
Device
Marking
L2SA2030M3T5G
S-L2SA2030M3T5G
BW
Shipping
8000/Tape&Reel
Rev.O 1/3




Leshan Radio Company

L2SA2030M3T5G Datasheet Preview

L2SA2030M3T5G Datasheet

Low frequency transistor

No Preview Available !

LESHAN RADIO COMPANY, LTD.
L2SA2030M3T5G;S-L2SA2030M3T5G
Electrical characteristic curves
1000
500
VCE=2V
200 Ta=125°C
100 Ta=25°C
Ta= −40°C
50
20
10
5
2
1
0 0.5 1.0 1.5
BASE TO EMITTER VOLTAGE : VBE (V)
Fig.1 Grounded Emitter Propagation
Characteristics
1000
500
VCE=2V
200
100
Ta=125°C
Ta=25°C
50 Ta= −40°C
20
10
5
2
1
1 2 5 10 20 50 100 200 500 1000
COLLECTOR CURRENT : IC (mA)
Fig.2 DC Current Gain vs.
Collector Current
1000
500
Ta=25°C
200
100
50 IC / IB=50
20 IC / IB=20
10 IC / IB=10
5
2
1
1 2 5 10 20 50 100 200 500 1000
COLLECTOR CURRENT : IC (mA)
Fig.4 Collector-Emitter Saturation
Voltage vs.
Collector Current (ΙΙ)
1000
IE=0A
500 f=1MHz
Ta=25°C
200
100
50
Cib
20
10
Cob
5
2
1
0.1 0.2 0.5 1 2 5 10 20 50 100
EMITTER TO BASE VOLTAGE : VEB (V)
Fig.7 Collector Output Capacitance vs.
Collector-Base Voltage
Emitter Input Capacitance vs.
Emitter-Base Voltage
10000
5000
2000
1000
500
Ta= −40°C
Ta=25°C
Ta=125°C
IC / IB=20
200
100
50
20
10
1 2 5 10 20 50 100 200 500 1000
COLLECTOR CURRENT : IC (mA)
Fig.5 Base-Emitter Saturation
Voltage vs.Collecter Current
1000
500
IC / IB=20
200
100 Ta=125°C
50 Ta=25°C
Ta= −40°C
20
10
5
2
1
1 2 5 10 20 50 100 200 500 1000
COLLECTOR CURRENT : IC (mA)
Fig.3 Collector-Emitter Saturation
Voltage vs.
Collector Current (Ι)
1000
500
200
100
50
VCE=2V
Ta=25°C
20
10
5
2
1
1 2 5 10 20 50 100 200 500 1000
EMITTER CURRENT : IC (mA)
Fig.6 Gain Bandwidth Product vs.
Emitter Current
Rev.O 2/3


Part Number L2SA2030M3T5G
Description Low frequency transistor
Maker Leshan Radio Company
Total Page 3 Pages
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