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Leshan Radio Company

L2SB1197KRLT1G Datasheet Preview

L2SB1197KRLT1G Datasheet

Low Frequency Transistor PNP Silicon

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LESHAN RADIO COMPANY, LTD.
Low Frequency Transistor
PNP Silicon
L2SB1197K*LT1
FEATURE
ƽHigh current capacity in compact package.
IC = í0.8A.
www.DataSheet4U.com ƽEpitaxial planar type.
ƽNPN complement: L2SD1781K
ƽPb-Free Package is available.
3
1
2
SOT– 23 (TO–236AB)
DEVICE MARKING AND ORDERING INFORMATION
Device
Marking
Shipping
L2SB1197KQLT1
L2SB1197KQLT1G
L2SB1197KRLT1
L2SB1197KRLT1G
AHQ
AHQ
(Pb-Free)
AHR
AHR
(Pb-Free)
3000/Tape&Reel
3000/Tape&Reel
3000/Tape&Reel
3000/Tape&Reel
MAXIMUM RATINGS(Ta=25qC)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Limits
40
32
5
0.8
0.2
150
55 to 150
Unit
V
V
V
A
W
°C
°C
ELECTRICAL CHARACTERISTICS(Ta=25qC)
Parameter
Symbol Min.
Collector-base breakdown voltage BVCBO 40
Collector-emitter breakdown voltage BVCEO 32
Emitter-base breakdown voltage
BVEBO 5
Collector cutoff current
ICBO
Emitter cutoff current
IEBO
Collector-emitter saturation voltage VCE(sat)
DC current transfer ratio
hFE 120
Transition frequency
fT
Output capacitance
Cob
Typ. Max. Unit
−−V
−−V
−−V
− −0.5 µA
− −0.5 µA
− −0.5
V
390
200 MHz
12 30 pF
hFE values are classified as follows :
Item(*)
Q
R
hFE 120~270 180~390
1
BASE
3
COLLECTOR
2
EMITTER
Conditions
IC= −50µA
IC= −1mA
IE= −50µA
VCB= −20V
VEB= −4V
IC/IB= −0.5A/ 50mA
VCE= −3V, IC= −100mA
VCE= −5V, IE=50mA, f=100MHz
VCB= −10V, IE=0A, f=1MHz
L2SB1197KLT1-1/3




Leshan Radio Company

L2SB1197KRLT1G Datasheet Preview

L2SB1197KRLT1G Datasheet

Low Frequency Transistor PNP Silicon

No Preview Available !

www.DataSheet4U.com
LESHAN RADIO COMPANY, LTD.
L2SB1197KQLT1 L2SB1197KRLT1
L2SB1197KLT1-2/3


Part Number L2SB1197KRLT1G
Description Low Frequency Transistor PNP Silicon
Maker Leshan Radio Company
Total Page 3 Pages
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