900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






Leshan Radio Company

L2SC2411KPLT1 Datasheet Preview

L2SC2411KPLT1 Datasheet

Medium Power Transistor NPN silicon

No Preview Available !

LESHAN RADIO COMPANY, LTD.
Medium Power Transistor
NPN silicon
FEATURE
ƽEpitaxial planar type
ƽComplementary to L2SA1036K
www.DataSheet4U.ƽcoPmb-Free package is available
DEVICE MARKING AND ORDERING INFORMATION
Device
Marking
Shipping
L2SC2411KPLT1
CP
3000/Tape&Reel
L2SC2411KPLT1G
(Pb-Free)
CP
3000/Tape&Reel
L2SC2411KQLT1
CQ
3000/Tape&Reel
L2SC2411KQLT1G
(Pb-Free)
CQ
3000/Tape&Reel
L2SC2411KRLT1
CR
3000/Tape&Reel
L2SC2411KRLT1G
(Pb-Free)
CR
3000/Tape&Reel
MAXIMUM RATINGS (TA = 25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Limits
40
32
5
0.5
0.2
150
-55~+150
*PC must not be exceeded.
ELECTRICAL CHARACTERISTICS(TA= 25°C)
Parameter
Symbol
Min.
Typ
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltgae
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collcetor-emitter saturation voltage
Transition frequency
Output capacitance
hFE values are classified as follows:
Item P Q R
hFE
82~180 120~270 180~390
BVCBO
BVCEO
BVEBO
ICBO
IEBO
hFE
VCE(sat)
fT
Cob
40
32
5
-
-
82
-
-
-
-
-
-
-
-
-
-
250
6.0
Unit
V
V
V
A*
W
°C
°C
Max.
-
-
-
1
1
390
0.4
-
-
Unit
V
V
V
µA
µA
-
V
MHz
pF
L2SC2411K*LT1
3
1
2
SOT– 23 (TO–236AB)
1
BASE
3
COLLECTOR
2
EMITTER
Conditions
IC=100µA
IC=1mA
IE=100µA
VCB=20V
VEB=4V
VCE=3V
IC/IB=500mA/50mA
VCE=5V,IE=-20mA,f=100MHz
VCB=10V,IE=0A,f=1MHz
L2SC2411K*LT1-1/4




Leshan Radio Company

L2SC2411KPLT1 Datasheet Preview

L2SC2411KPLT1 Datasheet

Medium Power Transistor NPN silicon

No Preview Available !

LESHAN RADIO COMPANY, LTD.
Electrical characteristic curves(TA = 25°C)
L2SC2411K*LT1
1000
500 VCE=6V
200
100
www.DataSheet4U.com
50
20
10
5
Ta=100OC
80OC
25OC
25OC
55 OC
2
1
0.5
0.2
0.1
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
BASE TO EMITTER VOLTAGE : VBE(V)
Fig.1 Grounded emitter propagation characteristics
100
Ta = 25OC
0.50mA
50
0.45mA
0.40mA
0.35mA
0.30mA
0.25mA
0.20mA
0.15mA
0.10mA
0.05mA
0 IB = 0A
01
23
45
COLLECTOR TO EMITTER VOLTAGE : VCE(V)
Fig.2 Grounded emitter output characteristics(I)
500 Ta = 25OC
400
2mA
1.8mA
1.6mA
1.4mA
300 1.2mA
1.0mA
0.8mA
200 0.6mA
0.4mA
100
0.2mA
0 IB= 0A
0 1 2345
COLLECTOR TO EMITTER VOLTAGE : VCE(V)
Fig.3 Grounded emitter output characteristics(II)
1 Ta = 25OC
lC /l B = 10
0.5
0.2
0.1
0.05
0.02
0.5 1
2
5 1 0 2 0 5 0 100 200 500 1000
COLLECTOR TO EMITTER VOLTAGE : VCE(V)
Fig.4 Collector-emitter saturation voltage vs. collector current
L2SC2411K*LT1-2/4


Part Number L2SC2411KPLT1
Description Medium Power Transistor NPN silicon
Maker Leshan Radio Company
Total Page 4 Pages
PDF Download

L2SC2411KPLT1 Datasheet PDF

View PDF for Mobile








Similar Datasheet

1 L2SC2411KPLT1 Medium Power Transistor NPN silicon
Leshan Radio Company
2 L2SC2411KPLT1G Medium Power Transistor NPN silicon
Leshan Radio Company





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy