L2SC3356WT1G Description
The L2SC3356WT1is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. It has dynamic range and good current characteristic. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements;.
L2SC3356WT1G Key Features
- We declare that the material of product pliance with RoHS requirements
- Low Noise and High Gain
- High Power Gain
L2SC3356WT1G Applications
- We declare that the material of product pliance with RoHS requirements