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L2SC3356WT1G Datasheet High-Frequency Amplifier Transistor

Manufacturer: Leshan Radio Company

Overview: DATA SHEET LESHAN RADIO COMPANY, LTD.

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Datasheet Details

Part number L2SC3356WT1G
Manufacturer Leshan Radio Company
File Size 157.13 KB
Description High-Frequency Amplifier Transistor
Download L2SC3356WT1G Download (PDF)

General Description

The L2SC3356WT1is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band.

It has dynamic range and good current characteristic.

S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements;

Key Features

  • We declare that the material of product compliance with RoHS requirements.
  • Low Noise and High Gain NF = 1.1 dB TYP. , Ga = 11 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz.
  • High Power Gain MAG = 13 dB TYP. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz.

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