L2SC3356WT3G Datasheet - Leshan Radio Company

High-Frequency Amplifier Transistor

L2SC3356WT3G Features

* We declare that the material of product compliance with RoHS requirements.

* Low Noise and High Gain NF = 1.1 dB TYP., Ga = 11 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz

* High Power Gain MAG = 13 dB TYP. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz ABSOLUTE MAXIMUM RATINGS (

L2SC3356WT3G General Description

The L2SC3356WT1is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. It has dynamic range and good current characteristic. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP C.

L2SC3356WT3G Datasheet (157.13 KB)

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Datasheet Details

Part number:

L2SC3356WT3G

Manufacturer:

Leshan Radio Company

File Size:

157.13 KB

Description:

High-frequency amplifier transistor.

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L2SC3356WT3G High-Frequency Amplifier Transistor Leshan Radio Company

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L2SC3356WT3G Features

L2SC3356WT3G General Description

Datasheet Details

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