Part number:
L2SD1781KQLT3G
Manufacturer:
Leshan Radio Company
File Size:
109.83 KB
Description:
Medium power transistor.
L2SD1781KQLT3G Datasheet (109.83 KB)
* 1) Very low VCE(sat). VCE(sat) t 0.4 V (Typ.) (IC / IB = 500mA / 50mA) 2) High current capacity in compact package. 3) Complements the L2SB1197KXLT1G 4) We declare that the material of product compliance with RoHS requirements. 5) S- Prefix for Automotive and Other Applications Requiring Unique Site
L2SD1781KQLT3G Datasheet (109.83 KB)
L2SD1781KQLT3G
Leshan Radio Company
109.83 KB
Medium power transistor.
📁 Related Datasheet
L2SD1781KQLT1 Medium Power Transistor (Leshan Radio Company)
L2SD1781KQLT1G Medium Power Transistor (Leshan Radio Company)
L2SD1781KRLT1 Medium Power Transistor (Leshan Radio Company)
L2SD1781KRLT1G Medium Power Transistor (Leshan Radio Company)
L2SD1781KRLT3G Medium Power Transistor (Leshan Radio Company)
L2SD2114KVLT1 Epitaxial planar type NPN silicon transistor (Leshan Radio Company)
L2SD2114KVLT1G Epitaxial planar type NPN silicon transistor (Leshan Radio Company)
L2SD2114KVLT3G NPN silicon transistor (Leshan Radio Company)
L2SD2114KWLT1 Epitaxial planar type NPN silicon transistor (Leshan Radio Company)
L2SD2114KWLT1G Epitaxial planar type NPN silicon transistor (Leshan Radio Company)
