L2SD2114KVLT1G Features
* 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO =12V (Min.) www.DataSheet4U.com3) Low VCE (sat). VCE (sat) = 0.18V (Typ.) (IC / IB = 500mA / 20mA) 4) Pb-Free package is available. L2SD2114K
* LT1 3 1 2 SOT
* 23 (TO
* 236AB) zAbsolute maximum ratings (Ta
L2SD2114KVLT1G, L2SD2114KxLT1 Datasheet
Datasheet Details
L2SD2114KVLT1G, L2SD2114KxLT1
Leshan Radio Company
109.27 KB
Epitaxial planar type npn silicon transistor.
This datasheet PDF includes multiple part numbers: L2SD2114KVLT1G, L2SD2114KxLT1.
Please refer to the document for exact specifications by model.
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