L2SD2114KVLT1G Description
Epitaxial planar type NPN silicon transistor zFeatures 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO =12V (Min.) ..3) Low VCE (sat).
L2SD2114KVLT1G is Epitaxial planar type NPN silicon transistor manufactured by Leshan Radio Company.
Epitaxial planar type NPN silicon transistor zFeatures 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO =12V (Min.) ..3) Low VCE (sat).