Part number:
L2SD2114KVLT1G
Manufacturer:
Leshan Radio Company
File Size:
109.27 KB
Description:
Epitaxial planar type npn silicon transistor.
L2SD2114KVLT1G Datasheet (109.27 KB)
* 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO =12V (Min.) www.DataSheet4U.com3) Low VCE (sat). VCE (sat) = 0.18V (Typ.) (IC / IB = 500mA / 20mA) 4) Pb-Free package is available. L2SD2114K
* LT1 3 1 2 SOT
* 23 (TO
* 236AB) zAbsolute maximum ratings (Ta
L2SD2114KVLT1G Datasheet (109.27 KB)
L2SD2114KVLT1G
Leshan Radio Company
109.27 KB
Epitaxial planar type npn silicon transistor.
📁 Related Datasheet
L2SD2114KVLT1 Epitaxial planar type NPN silicon transistor (Leshan Radio Company)
L2SD2114KVLT3G NPN silicon transistor (Leshan Radio Company)
L2SD2114KWLT1 Epitaxial planar type NPN silicon transistor (Leshan Radio Company)
L2SD2114KWLT1G Epitaxial planar type NPN silicon transistor (Leshan Radio Company)
L2SD2114KWLT3G NPN silicon transistor (Leshan Radio Company)
L2SD1781KQLT1 Medium Power Transistor (Leshan Radio Company)
L2SD1781KQLT1G Medium Power Transistor (Leshan Radio Company)
L2SD1781KQLT3G Medium Power Transistor (Leshan Radio Company)
L2SD1781KRLT1 Medium Power Transistor (Leshan Radio Company)
L2SD1781KRLT1G Medium Power Transistor (Leshan Radio Company)
