L2SD2114KVLT1G Datasheet Epitaxial Planar Type NPN Silicon Transistor

Manufacturer: Leshan Radio Company

Overview: LESHAN RADIO COMPANY, LTD. Epitaxial planar type NPN silicon.

This datasheet includes multiple variants, all published together in a single manufacturer document.

Datasheet Details

Part number	L2SD2114KVLT1G
Manufacturer	Leshan Radio Company
File Size	109.27 KB
Description	Epitaxial planar type NPN silicon transistor
Datasheet	L2SD2114KVLT1G L2SD2114KxLT1 Datasheet (PDF)

Key Features

1) High DC current gain. hFE = 1200 (Typ. ) 2) High emitter-base voltage. VEBO =12V (Min. ) www. DataSheet4U. com3) Low VCE (sat). VCE (sat) = 0.18V (Typ. ) (IC / IB = 500mA / 20mA) 4) Pb-Free package is available. L2SD2114K.
LT1 3 1 2 SOT.
23 (TO.
236AB) zAbsolute maximum ratings (Ta=25°C) Parameter Symbol Collector-base voltage Collector-emitter voltage Emitter-base voltage VCBO VCEO VEBO Collector current IC Collector power dissipation Junction temperature Storage temper.

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