L2SD2114KVLT3G Description
Epitaxial planar type LESHAN RADIO PANY, LTD. NPN silicon transistor L2SD2114KVLT1G Series zFeatures 1) High DC current gain. S-L2SD2114KVLT1G Series hFE = 1200 (Typ.) 2) High emitter-base voltage.
L2SD2114KVLT3G is NPN silicon transistor manufactured by Leshan Radio Company.
Epitaxial planar type LESHAN RADIO PANY, LTD. NPN silicon transistor L2SD2114KVLT1G Series zFeatures 1) High DC current gain. S-L2SD2114KVLT1G Series hFE = 1200 (Typ.) 2) High emitter-base voltage.