L2SD2114KWLT3G transistor equivalent, npn silicon transistor.
1) High DC current gain.
S-L2SD2114KVLT1G Series
hFE = 1200 (Typ.)
2) High emitter-base voltage. VEBO =12V (Min.)
3
3) Low VCE (sat). VCE (sat) = 0.18V (Typ.) (IC / .
Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
SOT
– 23 (TO.
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