L2SD2114KWLT3G Features
* 1) High DC current gain. S-L2SD2114KVLT1G Series hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO =12V (Min.) 3 3) Low VCE (sat). VCE (sat) = 0.18V (Typ.) (IC / IB = 500mA / 20mA) 1 2 4) We declare that the material of product compliance with RoHS requirements. 5) S- Prefix for Automotive
L2SD2114KWLT3G, L2SD2114KVLT3G Datasheet
Datasheet Details
L2SD2114KWLT3G, L2SD2114KVLT3G
Leshan Radio Company
99.50 KB
Npn silicon transistor.
This datasheet PDF includes multiple part numbers: L2SD2114KWLT3G, L2SD2114KVLT3G.
Please refer to the document for exact specifications by model.
📁 Related Datasheet
L2SD2114KWLT1 Epitaxial planar type NPN silicon transistor (Leshan Radio Company)
L2SD2114KWLT1G Epitaxial planar type NPN silicon transistor (Leshan Radio Company)
L2SD2114KVLT1 Epitaxial planar type NPN silicon transistor (Leshan Radio Company)
L2SD2114KVLT1G Epitaxial planar type NPN silicon transistor (Leshan Radio Company)
L2SD2114KVLT3G NPN silicon transistor (Leshan Radio Company)
L2SD1781KQLT1 Medium Power Transistor (Leshan Radio Company)
L2SD1781KQLT1G Medium Power Transistor (Leshan Radio Company)
L2SD1781KQLT3G Medium Power Transistor (Leshan Radio Company)
L2SD2114KWLT3G Distributor
