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Leshan Radio Company
Leshan Radio Company

L8050QLT1G Datasheet Preview

L8050QLT1G Datasheet

General Purpose Transistors

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L8050QLT1G pdf
LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
NPN Silicon
FEATURE
ƽHigh current capacity in compact package.
IC = 0.8A.
ƽEpitaxial planar type.
ƽPNP complement: L8550
ƽPb-Free Package is available.
DEVICE MARKING AND ORDERING INFORMATION
Device
Marking
Shipping
L8050PLT1
80P
3000/Tape&Reel
L8050PLT1G
80P
(Pb-Free)
3000/Tape&Reel
L8050QLT1
1YC
3000/Tape&Reel
L8050QLT1G
1YC
(Pb-Free)
3000/Tape&Reel
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current-continuoun
Symbol
VCEO
VCBO
VEBO
IC
Max
25
40
5
800
Unit
V
V
V
mAdc
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR-5 Board,(1)
TA=25°C
Derate above 25°C
Thermal Resistance,Junction to Ambient
Total Device Dissipation
Alumina Substrate,(2) TA=25°C
Derate above 25°C
Symbol
PD
R θJ A
PD
Max
Unit
225 mW
1.8 mW/°C
556 °C/W
300 mW
2.4 mW/°C
Thermal Resistance,Junction to Ambient
Junction and Storage Temperature
R θJ A
Tj,T Stg
417
-55 to +150
°C/W
°C
L8050*LT1
3
1
2
SOT–23
COLLECTOR
3
1
BASE
2
EMITTER
L8050*LT1–1/3



Leshan Radio Company
Leshan Radio Company

L8050QLT1G Datasheet Preview

L8050QLT1G Datasheet

General Purpose Transistors

No Preview Available !

L8050QLT1G pdf
LESHAN RADIO COMPANY, LTD.
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Typ
Collector-Emitter Breakdown Voltage
(IC=1.0mA)
Emitter-Base Breakdown Voltage
(IE=100µΑ)
Collector-Base Breakdown Voltage
(IC=100µΑ)
Collector Cutoff Current (VCB=35V)
Emitter Cutoff Current (VEB=4V)
V(BR)CEO
V(BR)EBO
V(BR)CBO
ICBO
IEBO
25
5
40
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
ON CHARACTERISTICS
DC Current Gain
IC=100mA,VCE=1V
Collector-Emitter Saturation Voltage
hFE
150
-
(IC=800mA)
VCE(S)
-
-
L8050*LT1
Max
Unit
–V
–V
–V
150 nA
150 nA
Max
Unit
600
0.5 V
NOTE :
*P
hFE 100~200
QR
150~300 200~400
S
300~600
L8050*LT1–2/3


Part Number L8050QLT1G
Description General Purpose Transistors
Maker Leshan Radio Company
Total Page 3 Pages
PDF Download
L8050QLT1G pdf
L8050QLT1G Datasheet PDF
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