900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






Leshan Radio Company

L9014TLT1G Datasheet Preview

L9014TLT1G Datasheet

General Purpose Transistors

No Preview Available !

LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
NPN Silicon
FEATURE
ƽComplementary to L9014.
ƽWe declare that the material of product compliance with RoHS requirements.
ƽS- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
L9014QLT1G
Series
S-L9014QLT1G
Series
DEVICE MARKING AND ORDERING INFORMATION
Device
L9014QLT1G
S-L9014QLT1G
Marking
14Q
Shipping
3000/Tape&Reel
L9014QLT3G S-L9014QLT3G
14Q
10000/Tape&Reel
L9014RLT1G S-L9014RLT1G 14R
3000/Tape&Reel
L9014RLT3G S-L9014RLT3G 14R
10000/Tape&Reel
L9014SLT1G S-L9014SLT1G 14S
3000/Tape&Reel
L9014SLT3G S-L9014SLT3G 14S
10000/Tape&Reel
L9014TLT1G S-L9014TLT1G 14T
3000/Tape&Reel
L9014TLT3G S-L9014TLT3G 14T
10000/Tape&Reel
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector current-continuoun
Symbol
VCEO
VCBO
VEBO
IC
Value
45
50
5
100
Unit
V
V
V
mA
THERMAL CHARATEERISTICS
Characteristic
Symbol Max
Unit
Total Device Dissipation FR-5 Board, (1)
TA=25oC
Derate above 25oC
PD
225 mW
1.8 mW/ oC
Thermal Resistance, Junction to Ambient R©JA
556 o C/W
Total Device Dissipation
PD
Alumina Substrate, (2) TA=25 oC
300 mW
Derate above 25oC
2.4 mW/ oC
Thermal Resistance, Junction to Ambient R©JA
417 oC /W
Junction and Storage Temperature
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
TJ ,Tstg
-55 to +150 o C
3
1
2
SOT– 23
COLLECTOR
3
1
BASE
2
EMITTER
Rev.O 1/4




Leshan Radio Company

L9014TLT1G Datasheet Preview

L9014TLT1G Datasheet

General Purpose Transistors

No Preview Available !

LESHAN RADIO COMPANY, LTD.
L9014QLT1G Series
S-L9014QLT1G Series
ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted)
OFF CHARACTERISTICS
Characteristic
Collector-Emitter Breakdown Voltage
(IC=1.0mA)
Emitter-Base Breakdown Voltage
(IE=100­A)
Collector-Base Breakdown Voltage
(IC=100­A)
Collector Cutoff Current (VCB=40V)
Emitter Cutoff Current (VEB=3V)
ON CHARACTERISTICS
Symbol
V(BR)CEO
Min
45
V(BR)EBO
5
V(BR)CBO
50
ICBO
IEBO
-
Typ
-
-
-
-
DC Current Gain
(IC=1mA, VCE=5V)
Collector-Emitter Saturation Voltage
(IC=100mA,IB=5mA)
HFE 150
VCE -
-
-
NOTE:
*
QRS
T
HFE 150~300 200~400 300~600 400~1000
Max
-
-
-
100
100
1000
0.3
Unit
V
V
V
nA
nA
V
Rev.O 2/4


Part Number L9014TLT1G
Description General Purpose Transistors
Maker Leshan Radio Company
Total Page 4 Pages
PDF Download

L9014TLT1G Datasheet PDF

View PDF for Mobile








Similar Datasheet

1 L9014TLT1G General Purpose Transistors
Leshan Radio Company





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy