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LBC848BWT3G - General Purpose Transistors

Download the LBC848BWT3G datasheet PDF. This datasheet also covers the LBC846AWT3G variant, as both devices belong to the same general purpose transistors family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (LBC846AWT3G-LeshanRadioCompany.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number LBC848BWT3G
Manufacturer Leshan Radio Company
File Size 274.38 KB
Description General Purpose Transistors
Datasheet download datasheet LBC848BWT3G Datasheet

Full PDF Text Transcription for LBC848BWT3G (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for LBC848BWT3G. For precise diagrams, and layout, please refer to the original PDF.

LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon • Moisture Sensitivity Level: 1 • ESD Rating – Human Body Model: >4000 V ESD Rating – Machine Model: >4...

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ESD Rating – Human Body Model: >4000 V ESD Rating – Machine Model: >400 V • We declare that the material of product compliance with RoHS requirements. MAXIMUM RATINGS Rating Symbol Collector–Emitter Voltage LBC846 LBC847, LBC850 LBC848, LBC849 VCEO Collector–Base Voltage LBC846 LBC847, LBC850 LBC848, LBC849 VCBO Emitter–Base Voltage LBC846 LBC847, LBC850 LBC848, LBC849 VEBO Collector Current – Continuous THERMAL CHARACTERISTICS IC Characteristic Symbol Total Device Dissipation FR–5 Board (Note 1.) TA = 25°C Derate above 25°C PD Thermal Resistance, Junction to Ambient (Note 1.) RqJA Junction and Storage Temperature Range T

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