LBC856BWT1G Description
General Purpose Transistors .. PNP Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT 323/ SC 70 which is designed for low power surface mount applications.
LBC856BWT1G Key Features
- Continuous Symbol V CEO V CBO V
- 10 µA) Emitter-Base Breakdown Voltage (IE =
- 1.0 µA)
- 30 V) (VCB =
- 30 V, TA = 150°C) 1.FR-5=1.0 x 0.75 x 0.062in
- 0.5 mA) Collector-Emitter Saturation Voltage (I C = -100 mA, I B =
- 125 220 420
- 90 150 270 180 290 520
- 250 475 800
- Bandwidth Product (I C =