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LBC859BLT1G - General Purpose Transistors

This page provides the datasheet information for the LBC859BLT1G, a member of the LBC857CLT1G General Purpose Transistors family.

Datasheet Summary

Features

  • ERMAL LIMIT SECOND.

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Datasheet preview – LBC859BLT1G

Datasheet Details

Part number LBC859BLT1G
Manufacturer Leshan Radio Company
File Size 225.70 KB
Description General Purpose Transistors
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LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon • Moisture Sensitivity Level: 1 • ESD Rating – Human Body Model: >4000 V ESD Rating – Machine Model: >400 V • We declare that the material of product compliance with RoHS requirements. • S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. LBC857CLT1G S-LBC857CLT1G Series 3 MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Rating Symbol Value Collector-Emitter Voltage LBC856 LBC857 LBC858, LBC859 VCEO –65 –45 –30 Collector-Base Voltage LBC856 LBC857 LBC858, LBC859 VCBO –80 –50 –30 Emitter–Base Voltage Collector Current – Continuous THERMAL CHARACTERISTICS VEBO IC –5.
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