LDTB113ELT1G
LDTB113ELT1G is Bias Resistor Transistor manufactured by Leshan Radio Company.
Features
1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit).
2) The bias resistors consist of thin-film resistors with plete isolation to allow positive biasing of the input. They also have the advantage of almost pletely eliminating parasitic effects.
3) Only the on/off conditions need to be set for operation, making the device design easy.
- We declare that the material of product pliance with
Ro HS requirements.
- S
- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. z Absolute maximum ratings (Ta=25°C)
Parameter
Supply voltage Input voltage Output current Power dissipation Junction temperature Storage temperature
Symbol
VCC VIN IC PD Tj Tstg
Limits
- 50
- 10 to +10
- 500 200 150
- 55 to +150
Unit
V V m A m W C C
LDTB113ELT1G S-LDTB113ELT1G
3 1
2 SOT- 23
1 BASE
R1 R2
3 COLLECTOR
2 EMITTER
DEVICE MARKING AND RESISTOR VALUES
Device
Marking R1 (K) R2 (K)
Shipping
LDTB113ELT1G S-LDTB113ELT1G
LDTB113ELT3G S-LDTB113ELT3G
K4 K4
1 1 3000/Tape & Reel 1 1 10000/Tape & Reel z Electrical characteristics (Ta=25°C)
Parameter
Symbol Min.
Input voltage
VI(off) VI(on)
- - 3
Output...
