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Leshan Radio Company

LDTB113ZLT3G Datasheet Preview

LDTB113ZLT3G Datasheet

Bias Resistor Transistor

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LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor
PNP Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
Applications
Inverter, Interface, Driver
Features
1) Built-in bias resistors enable the configuration of an
inverter circuit without connecting external input
resistors (see equivalent circuit).
2) The bias resistors consist of thin-film resistors with
complete isolation to allow positive biasing of the input.
They also have the advantage of almost completely
eliminating parasitic effects.
3) Only the on/off conditions need to be set for operation,
making the device design easy.
We declare that the material of product compliance with
RoHS requirements.
S - Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
zAbsolute maximum ratings (Ta=25°C)
Parameter
Supply voltage
Input voltage
Output current
Power dissipation
Junction temperature
Storage temperature
Symbol
VCC
VIN
IC
PD
Tj
Tstg
Limits
50
10 to +5
500
200
150
55 to +150
Unit
V
V
mA
mW
C
C
LDTB113ZLT1G
S-LDTB113ZLT1G
3
1
2
SOT-23
1
BASE
R1
R2
3
COLLECTOR
2
EMITTER
DEVICE MARKING AND RESISTOR VALUES
Device
Marking R1 (K) R2 (K)
Shipping
LDTB113ZLT1G
S-LDTB113ZLT1G
LDTB113ZLT3G
S-LDTB113ZLT3G
K8
K8
1 10 3000/Tape & Reel
1 10 10000/Tape & Reel
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min.
Input voltage
VI(off)
VI(on)
3
Output voltage
VO(on)
Input current
II
Output current
IO(off)
DC current gain
GI 56
Input resistance
R1 0.7
Resistance ratio
R2/R1
8
Transition frequency
fT
Transition frequency of the device
Typ.
1
10
200
Max.
0.3
0.3
7.2
0.5
1.3
12
Unit
V
V
mA
µA
k
MHz
Conditions
VCC= 5V, IO= 100µA
VO= 0.3V, IO= 20mA
IO/II= 50mA/2.5mA
VI= 5V
VCC= 50V, VI=0V
VO= 5V, IO= 50mA
VCE= 10V, IE=50mA, f=100MHz
Rev.O 1/3




Leshan Radio Company

LDTB113ZLT3G Datasheet Preview

LDTB113ZLT3G Datasheet

Bias Resistor Transistor

No Preview Available !

LESHAN RADIO COMPANY, LTD.
LDTB113ZLT1G;S-LDTB113ZLT1G
zElectrical characteristic curves
-100 VO= 0.3V
-50
-20
-10
-5
-2
-1
-500m
Ta= 40 C
25 C
100 C
-200m
-100m
-500µ -1m -2m -5m -10m -20m -50m-100m-200m -500m
OUTPUT CURRENT : IO (A)
Fig.1 Input voltage vs. output current
(ON characteristics)
-10m
-5m
-2m
-1m
-500µ
-200µ
-100µ
-50µ
-20µ
-10µ
-5µ
-2µ
-1µ
0
Fig.2
VCC= 5V
Ta=100 C
25 C
40 C
-0.5 -1.0 -1.5 -2.0 -2.5 -3.0
INPUT VOLTAGE : VI (off) (V)
Output current vs. input voltage
(OFF characteristics)
1k
500
200 Ta=100 C
25 C
100 40 C
50
VO= 5V
20
10
5
2
1
-500µ -1m -2m -5m -10m -20m -50m-100m-200m -500m
OUTPUT CURRENT : IO (A)
Fig.3 DC current gain vs. output
current
-1
-500m
-200m
-100m
-50m
Ta=100 C
25 C
40 C
lO/lI=20
-20m
-10m
-5m
-2m
-1m
-500µ -1m -2m -5m -10m -20m -50m-100m-200m -500m
OUTPUT CURRENT : IO (A)
Fig.4 Output voltage vs. output
current
Rev.O 2/3


Part Number LDTB113ZLT3G
Description Bias Resistor Transistor
Maker Leshan Radio Company
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