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Leshan Radio Company

LDTB123ELT1G Datasheet Preview

LDTB123ELT1G Datasheet

Bias Resistor Transistor

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LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor
PNP Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
Applications
Inverter, Interface, Driver
Features
1) Built-in bias resistors enable the configuration of an
inverter circuit without connecting external input
resistors (see equivalent circuit).
2) The bias resistors consist of thin-film resistors with
complete isolation to allow positive biasing of the input.
They also have the advantage of almost completely
eliminating parasitic effects.
3) Only the on / off conditions need to be set for operation,
making the device design easy.
We declare that the material of product compliance with
RoHS requirements.
S- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Supply voltage
Input voltage
Output current
VCC
VIN
IC
50
12 to +10
500
V
V
mA
Power dissipation
Junction temperature
Storage temperature
PD
Tj
Tstg
200
150
55 to +150
mW
C
C
LDTB123ELT1G
S-LDTB123ELT1G
3
1
2
SOT-23
1
BASE
R1
R2
3
COLLECTOR
2
EMITTER
DEVICE MARKING AND RESISTOR VALUES
Device
Marking R1 (K) R2 (K)
Shipping
LDTB123ELT1G
S-LDTB123ELT1G
LDTB123ELT3G
S-LDTB123ELT3G
K5
K5
2.2 2.2 3000/Tape & Reel
2.2 2.2 10000/Tape & Reel
zElectrical characteristics (Ta=25°C)
Parameter
Input voltage
Output voltage
Input current
Output current
DC current gain
Input resistance
Resistance ratio
Transition frequency
Characteristics of built-in transistor
Symbol
VI(off)
VI(on)
VO(on)
II
IO(off)
GI
R1
R2/R1
fT
Min.
3
39
1.54
0.8
Typ.
0.1
2.2
1
200
Max.
0.5
0.3
3.8
0.5
2.86
1.2
Unit
V
V
mA
µA
k
MHz
Conditions
VCC= −5V, IO= −100µA
VO= −0.3V, IO= −20mA
IO/II= −50mA/2.5mA
VI= −5V
VCC= −50V, VI=0V
VO= −5V, IO= −50mA
VCE= −10V, IE= 50mA, f= 100MHz
Rev.O 1/3




Leshan Radio Company

LDTB123ELT1G Datasheet Preview

LDTB123ELT1G Datasheet

Bias Resistor Transistor

No Preview Available !

LESHAN RADIO COMPANY, LTD.
LDTB123ELT1G ;S-LDTB123ELT1G
zElectrical characteristic curves
-100
VO= −0.3V
-50
-20
-10
-5 Ta=25 C
40 C
-2 100 C
-1
-500m
-200m
-100m
-0.5m -1m -2m -5m -10m -20m -50m -100m -200m -500m
OUTPUT CURRENT : IO (A)
Fig.1 Input voltage vs. output current
(ON characteristics)
-10m
-5m
-2m
Ta=100 C
25 C
-1m 40 C
-500µ
VCC= −5V
-200µ
-100µ
-50µ
-20µ
-10µ
-5µ
-2µ
-1µ
0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0
INPUT VOLTAGE : VI (off) (V)
Fig.2 Output current vs. input voltage
(OFF characteristics)
1k
VO= −5V
500
200
Ta=100 C
100 25 C
50 40 C
20
10
5
2
1
-0.5m -1m -2m -5m -10m -20m -50m -100m -200m -500m
OUTPUT CURRENT : IO (A)
Fig.3 DC current gain vs. output current
-1
lO/lI=20
-500m
Ta=100 C
-200m 25 C
40 C
-100m
-50m
-20m
-10m
-5m
-2m
-1m
-0.5m -1m -2m -5m -10m -20m -50m -100m -200m -500m
OUTPUT CURRENT : IO (A)
Fig.4 Output voltage vs. output current
Rev.O 2/3


Part Number LDTB123ELT1G
Description Bias Resistor Transistor
Maker Leshan Radio Company
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