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Leshan Radio Company

LDTB123YLT1G Datasheet Preview

LDTB123YLT1G Datasheet

Bias Resistor Transistor

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LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor
PNP Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
Applications
Inverter, Interface, Driver
Features
1) Built-in bias resistors enable the configuration of an
inverter circuit without connecting external input
resistors (see equivalent circuit).
2) The bias resistors consist of thin-film resistors with
complete isolation to allow positive biasing of the input.
They also have the advantage of almost completely
eliminating parasitic effects.
3) Only the on / off conditions need to be set for operation,
making the device design easy.
We declare that the material of product compliance with
RoHS requirements.
S- Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC-Q101 Qualified and
PPAP Capable
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Supply voltage
Input voltage
Output current
VCC
VIN
IC
Power dissipation
Junction temperature
Storage temperature
PD
Tj
Tstg
Limits
50
12 to +5
500
200
150
55 to +150
Unit
V
V
mA
mW
C
C
LDTB123YLT1G
S-LDTB123YLT1G
3
1
2
SOT-23
1
BASE
R1
R2
3
COLLECTOR
2
EMITTER
DEVICE MARKING AND RESISTOR VALUES
Device
Marking R1 (K) R2 (K)
Shipping
LDTB123YLT1G
S-LDTB123YLT1G
F52
2.2
LDTB123YLT3G
S-LDTB123YLT3G
F52
2.2
zElectrical characteristics (Ta=25°C)
10 3000/Tape & Reel
10 10000/Tape & Reel
Parameter
Input voltage
Output voltage
Input current
Output current
DC current gain
Input resistance
Resistance ratio
Transition frequency
Transition frequency of the device
Symbol
VI(off)
VI(on)
VO(on)
II
IO(off)
GI
R1
R2/R1
fT
Min.
2
56
1.54
3.6
Typ.
0.1
2.2
4.5
200
Max.
0.3
0.3
3.0
0.5
2.86
5.5
Unit
V
V
mA
µA
k
MHz
Conditions
VCC= 5V, IO= 100µA
VO= 0.3V, IO= 20mA
IO/II= 50mA/2.5mA
VI= 5V
VCC= 50V, VI= 0V
VO= 5V, IO= 50mA
VCE= 10V, IE= 50mA, f= 100MHz
Rev.O 1/3




Leshan Radio Company

LDTB123YLT1G Datasheet Preview

LDTB123YLT1G Datasheet

Bias Resistor Transistor

No Preview Available !

LESHAN RADIO COMPANY, LTD.
LDTB123YLT1G,S-LDTB123YLT1G
zElectrical characteristic curves
-100
VO= 0.3V
-50
-20
-10
-5
Ta= 40°C
-2
25 °C
100 °C
-1
-500m
-200m
-100m
-0.5m -1m -2m -5m -10m -20m -50m -100m -200m -500m
OUTPUT CURRENT : IO (A)
Fig.1 Input voltage vs. output current
(ON characteristics)
-10m
-5m VCC= 5V
-2m
-1m
-500µ Ta=100°C
-200µ 25°C
-100µ 40°C
-50µ
-20µ
-10µ
-5µ
-2µ
-1µ
0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0
INPUT VOLTAGE : VI (off) (V)
Fig.2 Output current vs. input voltage
(OFF characteristics)
1k
500
Ta=100°C
200 25°C
40°C
100
50
VO= 5V
20
10
5
2
1
-0.5m -1m -2m -5m -10m -20m -50m -100m -200m -500m
OUTPUT CURRENT : IO (A)
Fig.3 DC current gain vs. output
current
-1
-500m
-200m
Ta=100°C
25°C
-100m 40°C
-50m
lO/lI=20
-20m
-10m
-5m
-2m
-1m
-0.5m -1m -2m
-5m -10m -20m -50m -100m -200m -500m
OUTPUT CURRENT : IO (A)
Fig.4 Output voltage vs. output
current
Rev.O 2/3


Part Number LDTB123YLT1G
Description Bias Resistor Transistor
Maker Leshan Radio Company
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