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LDTBG12GPLT1G Datasheet, Leshan Radio Company

LDTBG12GPLT1G transistor equivalent, bias resistor transistor.

LDTBG12GPLT1G Avg. rating / M : 1.0 rating-14

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LDTBG12GPLT1G Datasheet

Features and benefits

1) High hFE. 300 (Min.) (VCE / IC=2V / 0.5A) 2) Low saturation voltage, (VCE(sat)=0.4V at IC / IB=500mA / 5mA) 3) Built-in zener diode gives strong protection against rev.

Application

Driver zFeatures 1) High hFE. 300 (Min.) (VCE / IC=2V / 0.5A) 2) Low saturation voltage, (VCE(sat)=0.4V at IC / IB=500m.

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LDTBG12GPLT1G Page 1 LDTBG12GPLT1G Page 2 LDTBG12GPLT1G Page 3

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