LDTBG12GPLT3G, LDTBG12GPLT1G - Bias Resistor Transistor

Leshan Radio Company

Datasheet Details

Part number	LDTBG12GPLT3G, LDTBG12GPLT1G
Manufacturer	Leshan Radio Company
File Size	321.69 KB
Description	Bias Resistor Transistor
Datasheet	LDTBG12GPLT1G-LeshanRadioCompany.pdf
Note	This datasheet PDF includes multiple part numbers: LDTBG12GPLT3G, LDTBG12GPLT1G. Please refer to the document for exact specifications by model.

1) High hFE. 300 (Min. ) (VCE / IC=2V / 0.5A) 2) Low saturation voltage, (VCE(sat)=0.4V at IC / IB=500mA / 5mA) 3) Built-in zener diode gives strong protection against reverse surge by L- load (an inductive load).
We declare that the material of product compliance with RoHS requirements. zStructure NPN epitaxial planar silicon transistor (with built-in resistor and zener diode) zAbsolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base.

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Published: Aug 25, 2015 |