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Leshan Radio Company

LDTD113ELT1G Datasheet Preview

LDTD113ELT1G Datasheet

Bias Resistor Transistor

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LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor
NPN Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
Applications
Inverter, Interface, Driver
Features
1) Built-in bias resistors enable the configuration of an
inverter circuit without connecting external input
resistors (see equivalent circuit).
2) The bias resistors consist of thin-film resistors with
complete isolation to allow positive biasing of the input.
They also have the advantage of almost completely
eliminating parasitic effects.
3) Only the on/off conditions need to be set for operation,
making the device design easy.
We declare that the material of product compliance with
RoHS requirements.
S- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
zAbsolute maximum ratings (Ta=25°C)
Parameter
Supply voltage
Input voltage
Output current
Power dissipation
Junction temperature
Storage temperature
Symbol
VCC
VIN
IC
Pd
Tj
Tstg
Limits
50
10 to +10
500
200
150
55 to +150
Unit
V
V
mA
mW
C
C
LDTD113ELT1G
S-LDTD113ELT1G
3
1
2
SOT-23
1
BASE
R1
R2
3
COLLECTOR
2
EMITTER
DEVICE MARKING AND RESISTOR VALUES
Device
Marking R1 (K) R2 (K)
Shipping
LDTD113ELT1G
E4
1
1 3000/Tape & Reel
S-LDTD113ELT1G
LDTD113ELT3G
E4
1
1 10000/Tape & Reel
S-LDTD113ELT3G
zElectrical characteristics (Ta=25°C)
Parameter
Input voltage
Output voltage
Input current
Output current
DC current gain
Input resistance
Resistance ratio
Transition frequency
Characteristics of built-in transistor
Symbol
VI(off)
VI(on)
VO(on)
II
IO(off)
GI
R1
R2/R1
fT
Min.
3
33
0.7
0.8
Typ.
0.1
1
1
200
Max.
0.5
0.3
7.2
0.5
1.3
1.2
Unit
V
V
mA
µA
k
MHz
Conditions
VCC=5V, IO=100µA
VO=0.3V, IO=20mA
IO/II=50mA/2.5mA
VI=5V
VCC=50V, VI=0V
VO=5V, IO=50mA
VCE=10V, IE= −50mA, f=100MHz
Rev.O 1/3




Leshan Radio Company

LDTD113ELT1G Datasheet Preview

LDTD113ELT1G Datasheet

Bias Resistor Transistor

No Preview Available !

LESHAN RADIO COMPANY, LTD.
LDTD113ELT1G;S-LDTD113ELT1G
zElectrical characteristic curves
100
VO=0.3V
50
20
10
5
2
1
500m
Ta= −40 C
25 C
100 C
200m
100m
500µ 1m 2m 5m 10m 20m 50m100m 200m 500m
OUTPUT CURRENT : IO (A)
Fig.1 Input voltage vs. output current
(ON characteristics)
10m
5m Ta=100 C
25 C
2m 40 C
1m
500µ
VCC=5V
200µ
100µ
50µ
20µ
10µ
5µ
2µ
1µ
0 0.5 1.0 1.5 2.0 2.5 3.0
INPUT VOLTAGE : VI(off) (V)
Fig.2 Output current vs. input voltage
(OFF characteristics)
1k
VO=5V
500
Ta=100 C
200 25 C
100 40 C
50
20
10
5
2
1
500µ 1m 2m 5m 10m 20m 50m100m200m 500m
OUTPUT CURRENT : IO (A)
Fig.3 DC current gain
vs. output current
1
500m
200m
100m
50m
Ta=100 C
25 C
40 C
lO/lI=20
20m
10m
5m
2m
1m
500µ 1m 2m 5m 10m 20m 50m100m200m 500m
OUTPUT CURRENT : IO (A)
Fig.4 Output voltage vs. output current
Rev.O 2/3


Part Number LDTD113ELT1G
Description Bias Resistor Transistor
Maker Leshan Radio Company
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