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Leshan Radio Company

LDTD123YLT1G Datasheet Preview

LDTD123YLT1G Datasheet

Bias Resistor Transistor

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LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor
NPN Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
Applications
Inverter, Interface, Driver
Features
1) Built-in bias resistors enable the configuration of an
inverter circuit without connecting external input
resistors (see equivalent circuit).
2) The bias resistors consist of thin-film resistors with
complete isolation to allow positive biasing of the input.
They also have the advantage of almost completely
eliminating parasitic effects.
3) Only the on/off conditions need to be set for operation,
making the device design easy.
We declare that the material of product compliance with
RoHS requirements.
S- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
zAbsolute maximum ratings (Ta=25°C)
Parameter
Supply voltage
Input voltage
Output current
Power dissipation
Junction temperature
Storage temperature
Symbol
VCC
VIN
IC
Pd
Tj
Tstg
Limits
50
5 to +12
500
200
150
55 to +150
Unit
V
V
mA
mW
C
C
LDTD123YLT1G
S-LDTD123YLT1G
3
1
2
SOT–23
1
BASE
R1
R2
3
COLLECTOR
2
EMITTER
DEVICE MARKING AND RESISTOR VALUES
Device
Marking R1 (K) R2 (K)
Shipping
LDTD123YLT1G
S-LDTD123YLT1G
LDTD123YLT3G
S-LDTD123YLT3G
F62
F62
2.2 10 3000/Tape & Reel
2.2 10 10000/Tape & Reel
zElectrical characteristics (Ta=25°C)
Parameter
Input voltage
Output voltage
Input current
Output current
DC current gain
Input resistance
Resistance ratio
Transition frequency
Transition frequency of the device
Symbol
VI(off)
VI(on)
VO(on)
II
IO(off)
GI
R1
R2/R1
fT
Min.
2
56
1.54
3.6
Typ.
0.1
2.2
4.5
200
Max.
0.3
0.3
3.6
0.5
2.86
5.5
Unit
V
V
mA
µA
k
MHz
Conditions
VCC=5V, IO=100µA
VO=0.3V, IO=20mA
IO/II=50mA/2.5mA
VI=5V
VCC=50V, VI=0V
VO=5V, IO=50mA
VCE=10V, IE= 50mA, f=100MHz
Rev.O 1/3




Leshan Radio Company

LDTD123YLT1G Datasheet Preview

LDTD123YLT1G Datasheet

Bias Resistor Transistor

No Preview Available !

LESHAN RADIO COMPANY, LTD.
LDTD123YLT1G ;S-LDTD123YLT1G
zElectrical characteristic curves
100
VO=0.3V
50
20
10
5
2
1
500m
Ta= −40 C
25 C
100 C
200m
100m
500µ 1m 2m 5m 10m 20m 50m100m 200m 500m
OUTPUT CURRENT : IO (A)
Fig.1 Input voltage vs. output current
(ON characteristics)
10m
5m
2m
1m
500µ
200µ
100µ
50µ
20µ
10µ
5µ
2µ
1µ
0
VCC=5V
Ta=100 C
25 C
40 C
0.5 1.0 1.5 2.0 2.5
INPUT VOLTAGE : VI(off) (V)
3.0
Fig.2 Output current vs. input voltage
(OFF characteristics)
1k
500
Ta=100 C
25 C
200 40 C
100
50
VO=5V
20
10
5
2
1
500µ1m 2m 5m 10m 20m 50m 100m 200m 500m
OUTPUT CURRENT : IO (A)
Fig.3 DC current gain vs. output current
1
500m
lO/lI=20
200m
100m
50m
Ta=100 C
25 C
40 C
20m
10m
5m
2m
1m
500µ 1m 2m 5m 10m 20m 50m 100m 200m 500m
OUTPUT CURRENT : IO (A)
Fig.4 Output voltage vs. output current
Rev.O 2/3


Part Number LDTD123YLT1G
Description Bias Resistor Transistor
Maker Leshan Radio Company
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Leshan Radio Company





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