logo

LDTDG12GPLT1G Datasheet, Leshan Radio Company

LDTDG12GPLT1G Datasheet, Leshan Radio Company

LDTDG12GPLT1G

datasheet Download (Size : 319.84KB)

LDTDG12GPLT1G Datasheet

LDTDG12GPLT1G transistor

bias resistor transistor.

LDTDG12GPLT1G

datasheet Download (Size : 319.84KB)

LDTDG12GPLT1G Datasheet

LDTDG12GPLT1G Features and benefits

LDTDG12GPLT1G Features and benefits

1) High hFE. 300 (Min.) (VCE / IC=2V / 0.5A) 2) Low saturation voltage, (VCE(sat)=0.4V at IC / IB=500mA / 5mA) 3) Built-in zener diode gives strong protection against rev.

LDTDG12GPLT1G Application

LDTDG12GPLT1G Application

Driver zFeatures 1) High hFE. 300 (Min.) (VCE / IC=2V / 0.5A) 2) Low saturation voltage, (VCE(sat)=0.4V at IC / IB=500m.

Image gallery

LDTDG12GPLT1G Page 1 LDTDG12GPLT1G Page 2 LDTDG12GPLT1G Page 3

TAGS

LDTDG12GPLT1G
Bias
Resistor
Transistor
Leshan Radio Company

Manufacturer


Leshan Radio Company

Related datasheet

LDTDG12GPLT3G

LDTDG12GPT1G

LDTDG12GPT3G

LDTDG12GPWT1G

LDTDG12GPWT3G

LDTD113EET1G

LDTD113ELT1G

LDTD113ELT3G

LDTD113ZET1G

LDTD113ZLT1G

LDTD113ZLT3G

LDTD113ZWT1G

LDTD113ZWT3G

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts