* 1) High hFE. 300 (Min.) (VCE / IC=2V / 0.5A) 2) Low saturation voltage, (VCE(sat)=0.4V at IC / IB=500mA / 5mA) 3) Built-in zener diode gives strong protection against reverse surge by L- load (an inductive load).
* We declare that the material of product compliance with RoHS requirements. z
LDTDG12GPLT1G Datasheet (319.84 KB)
LDTDG12GPLT1G
Leshan Radio Company
319.84 KB
Bias resistor transistor.
LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network LDTDG12GPLT1G zAppl.
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