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LDTDG12GPLT3G - Bias Resistor Transistor

Download the LDTDG12GPLT3G datasheet PDF. This datasheet also covers the LDTDG12GPLT1G variant, as both devices belong to the same bias resistor transistor family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • 1) High hFE. 300 (Min. ) (VCE / IC=2V / 0.5A) 2) Low saturation voltage, (VCE(sat)=0.4V at IC / IB=500mA / 5mA) 3) Built-in zener diode gives strong protection against reverse surge by L- load (an inductive load).
  • We declare that the material of product compliance with RoHS requirements. zStructure NPN epitaxial planar silicon transistor (with built-in resistor and zener diode) zAbsolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (LDTDG12GPLT1G-LeshanRadioCompany.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number LDTDG12GPLT3G
Manufacturer Leshan Radio Company
File Size 319.84 KB
Description Bias Resistor Transistor
Datasheet download datasheet LDTDG12GPLT3G Datasheet

Other Datasheets by Leshan Radio Company

Part Number Description
LDTDG12GPLT1G Bias Resistor Transistor
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LDTD113ELT3G Bias Resistor Transistor
LDTD113ZLT1G Bias Resistor Transistor
LDTD113ZLT3G Bias Resistor Transistor
LDTD114ELT1G Bias Resistor Transistor
LDTD114ELT3G Bias Resistor Transistor
LDTD114GLT1G Bias Resistor Transistor
LDTD114GLT3G Bias Resistor Transistor
LDTD123ELT1G Bias Resistor Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network LDTDG12GPLT1G zApplications Driver zFeatures 1) High hFE. 300 (Min.) (VCE / IC=2V / 0.5A) 2) Low saturation voltage, (VCE(sat)=0.4V at IC / IB=500mA / 5mA) 3) Built-in zener diode gives strong protection against reverse surge by L- load (an inductive load). • We declare that the material of product compliance with RoHS requirements.