LMBD2835LT1G
LMBD2835LT1G is Monolithic Dual Switching Diodes manufactured by Leshan Radio Company.
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LESHAN RADIO PANY, LTD.
Monolithic Dual Switching Diodes
FETURE z We declare that the material of product pliance with Ro HS requirements. ORDERING INFORMATION
Device LMBD2835LT1G LMBD2835LT3G LMBD2836LT1G LMBD2836LT3G Marking A3X A3X A2X A2X Shipping 3000/Tape&Reel 10000/Tape&Reel 3000/Tape&Reel 10000/Tape&Reel
1 3
LMBD2835LT1G LMBD2836LT1G
MAXIMUM RATINGS
Rating Peak Reverse Voltage D.C Reverse Voltage Peak Forward Current Average Rectified Current Symbol V RM VR I FM IO Value 75 35 75 450 300 150 100 Unit Vdc Vdc m Adc m Adc
LMBD2835LT1G LMBD2836LT1G
SOT- 23 (TO- 236AB)
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR- 5 Board (1) T A = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) T A = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 556 300 2.4 417
- 55 to +150 Unit m W m W/°C °C/W m W m W/°C °C/W °C
ANODE 3
CATHODE 1 2 CATHODE
R θ JA PD
R θ JA T J , T stg
DEVICE MARKING
LMBD2835LT1G = A3X;LMBD2836LT1G=A2X
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted)( EACH DIODE )
Characteristic Symbol V (BR) IR LMBD2835LT1 LMBD2836LT1 CT VF
- -
- -
- -
- 100 100 4.0 1.0 1.0 1.2 4.0 p F Vdc Min 35 75 Max
- - n Adc Unit Vdc
OFF CHARACTERISTICS
Reverse Breakdown Voltage(I R = 100 µAdc) LMBD2835LT1 LMBD2836LT1 Reverse Voltage Leakage Current (V R = 30 Vdc) (V R = 50 Vdc)
Diode Capacitance (V R = 0, f = 1.0 MHz) Forward Voltage(I F = 10 m Adc) (I F = 50 m Adc) (I F = 100 m Adc) Reverse Recovery Time(I F = I R = 10 m Adc, I R(REC)= 1.0m Adc) (Figure 1) 1. FR- 5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. t rr...