• Part: LMBD2835LT1G
  • Description: Monolithic Dual Switching Diodes
  • Category: Diode
  • Manufacturer: Leshan Radio Company
  • Size: 389.22 KB
Download LMBD2835LT1G Datasheet PDF
Leshan Radio Company
LMBD2835LT1G
LMBD2835LT1G is Monolithic Dual Switching Diodes manufactured by Leshan Radio Company.
.. LESHAN RADIO PANY, LTD. Monolithic Dual Switching Diodes FETURE z We declare that the material of product pliance with Ro HS requirements. ORDERING INFORMATION Device LMBD2835LT1G LMBD2835LT3G LMBD2836LT1G LMBD2836LT3G Marking A3X A3X A2X A2X Shipping 3000/Tape&Reel 10000/Tape&Reel 3000/Tape&Reel 10000/Tape&Reel 1 3 LMBD2835LT1G LMBD2836LT1G MAXIMUM RATINGS Rating Peak Reverse Voltage D.C Reverse Voltage Peak Forward Current Average Rectified Current Symbol V RM VR I FM IO Value 75 35 75 450 300 150 100 Unit Vdc Vdc m Adc m Adc LMBD2835LT1G LMBD2836LT1G SOT- 23 (TO- 236AB) THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR- 5 Board (1) T A = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) T A = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 556 300 2.4 417 - 55 to +150 Unit m W m W/°C °C/W m W m W/°C °C/W °C ANODE 3 CATHODE 1 2 CATHODE R θ JA PD R θ JA T J , T stg DEVICE MARKING LMBD2835LT1G = A3X;LMBD2836LT1G=A2X ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted)( EACH DIODE ) Characteristic Symbol V (BR) IR LMBD2835LT1 LMBD2836LT1 CT VF - - - - - - - 100 100 4.0 1.0 1.0 1.2 4.0 p F Vdc Min 35 75 Max - - n Adc Unit Vdc OFF CHARACTERISTICS Reverse Breakdown Voltage(I R = 100 µAdc) LMBD2835LT1 LMBD2836LT1 Reverse Voltage Leakage Current (V R = 30 Vdc) (V R = 50 Vdc) Diode Capacitance (V R = 0, f = 1.0 MHz) Forward Voltage(I F = 10 m Adc) (I F = 50 m Adc) (I F = 100 m Adc) Reverse Recovery Time(I F = I R = 10 m Adc, I R(REC)= 1.0m Adc) (Figure 1) 1. FR- 5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. t rr...