LMBT5550LT1
LMBT5550LT1 is Transistor manufactured by Leshan Radio Company.
FEATURE
ƽPb-Free package is available.
DEVICE MARKING AND ORDERING INFORMATION
Device LMBT5550LT1 LMBT5550LT1G (Pb-Free) Marking M1F M1F G1 G1 Shipping 3000/Tape&Reel 3000/Tape&Reel 3000/Tape&Reel 3000/Tape&Reel
LMBT5550LT1 LMBT5551LT1
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LMBT5551LT1 LMBT5551LT1G (Pb-Free)
MAXIMUM RATINGS
Rating Collector- Emitter Voltage Collector- Base Voltage Emitter- Base Voltage Collector Current
- Continuous Symbol V CEO V CBO V
Value 140 160 6.0 600
Unit Vdc Vdc Vdc m Adc
SOT- 23
COLLECTOR
BASE
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR- 5 Board, (1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 556 300 2.4 417
- 55 to +150 Unit m W m W/°C °C/W m W m W/°C °C/W °C
EMITTER
RθJA PD
RθJA TJ , Tstg
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector- Emitter Breakdown Voltage(3) (I C = 1.0 m Adc, I B = 0) Collector- Base Breakdown Voltage (I C = 100 µAdc, I E = 0) Emitter- Base Breakdown Voltage (I E = 10 µAdc, I C = 0) Collector Cutoff Current ( V CB = 100Vdc, I E = 0) ( V CB = 120Vdc, I E = 0) ( V CB = 100Vdc, I E = 0, T A=100 °C) ( V CB = 120Vdc, I E = 0, T A=100 °C) Emitter Cutoff Current ( V BE = 4.0Vdc, I C= 0) 1. FR- 5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. 3. Pulse Test: Pulse Width = 300 µs, Duty Cycle = 2.0%. I CBO LMBT5550 LMBT5551 LMBT5550 LMBT5551 I EBO
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- -
- 100 50 100 50 50 n Adc µAdc n Adc LMBT5550 LMBT5551 V
(BR)EBO
V (BR)CEO 140 160 V (BR)CBO 160 180 6.0
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