LMBT6517LT1
LMBT6517LT1 is Transistors manufactured by Leshan Radio Company.
LESHAN RADIO PANY, LTD.
High Voltage Transistors
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COLLECTOR
BASE
EMITTER 1 2
MAXIMUM RATINGS
Rating Collector- Emitter Voltage Collector- Base Voltage Emitter- Base Voltage Base Current Collector Current
- Continuous Symbol V CEO V CBO V
Value 350 350 5.0 250 500
Unit Vdc Vdc Vdc m Adc m Adc
SOT- 23
IB IC
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR- 5 Board, (1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 556 300 2.4 417
- 55 to +150 Unit m W m W/°C °C/W m W m W/°C °C/W °C
RθJA PD
RθJA TJ , Tstg
DEVICE MARKING
LMBT6517LT1 = 1Z
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector- Emitter Breakdown Voltage (I C = 1.0 m Adc ) Collector- Base Breakdown Voltage (I C = 100 µAdc ) Emitter- Base Breakdown Voltage (I E = 10 µAdc ) Collector Cutoff Current ( V CB = 250Vdc ) Emitter Cutoff Current ( V EB = 5.0Vdc ) 1. FR- 5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. V (BR)CEO V (BR)CBO V
(BR)EBO
350 350 6.0
- -
- -
- 50 50
Vdc Vdc Vdc n Adc n Adc
I CBO I EBO
LMBT6517- 1/6
LESHAN RADIO PANY, LTD.
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (Continued)
Characteristic Symbol h FE 20 30 30 20 15 VCE(sat)
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