LMBT6520LT1 Datasheet | Leshan Radio Company

LESHAN RADIO PANY, LTD. High Voltage Transistor COLLECTOR 1 2 BASE EMITTER . MAXIMUM RATINGS Rating Collector- Emitter Voltage Collector- Base Voltage Emitter- Base Voltage Base Current Collector Current - Continuous Symbol V CEO V CBO V EBO IB IC Value - 350 - 350 - 5.0 - 250 - 500 Unit Vdc Vdc Vdc m A m Adc SOT- 23 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR- 5 Board, (1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 556 300 2.4 417 - 55 to +150 Unit m W m W/°C °C/W m W m W/°C °C/W °C RθJA PD RθJA TJ , Tstg DEVICE MARKING LMBT6520LT1 = 2Z ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector- Emitter Breakdown Voltage (I C = - 1.0 m A ) Collector- Base Breakdown Voltage(I E = - 100 µA ) Emitter- Base Breakdown Voltage(I E = - 10 µA) Collector Cutoff Current( V CB = - 250V ) Emitter Cutoff Current( V EB = - 4.0V ) 1. FR- 5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. V (BR)CEO V (BR)CBO V (BR)EBO I CBO I EBO - 350 - 350 - 5.0 - - - -...