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Leshan Radio Company
Leshan Radio Company

LMBTA56LT1G Datasheet Preview

LMBTA56LT1G Datasheet

Driver Transistors PNP Silicon

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LMBTA56LT1G pdf
LESHAN RADIO COMPANY, LTD.
Driver Transistors
PNP Silicon
FEATURES
1) We declare that the material of product compliant with
RoHS requirements and Halogen Free.
2) S- Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101
Qualified and PPAP Capable.
DEVICE MARKING AND ORDERING INFORMATION
Device
LMBTA56LT1G
LMBTA56LT3G
Marking
2GM
2GM
Shipping
3000/Tape&Reel
10000/Tape&Reel
MAXIMUM RATINGS(Ta = 25)
Parameter
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Symbol
VCEO
VCBO
VEBO
IC
Limits
-80
-80
-4.0
-500
THERMAL CHARACTERISTICS
Parameter
Symbol
Total Power Dissipation FR-5
PD
Board,(Note 1.)@Ta = 25°C
Derate above 25°C
Thermal Resistance –
Junction-to-Ambient
RθJA
Total Power Dissipation Alumina
Substrate,(Note 2.)@Ta = 25°C
Derate above 25°C
Thermal Resistance,
Junction-to-Ambient
PD
RθJA
Junction and Storage
Temperature Range
TJ, Tstg
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
Limits
225
1.8
556
300
2.4
417
–55 to +150
Unit
mW
°C/W
°C/W
mW
°C/W
°C/W
°C
LMBTA56LT1G
S-LMBTA56LT1G
3
1
2
SOT–23
3
COLLECTOR
1
BASE
Unit
Vdc
Vdc
Vdc
mAdc
2
EMITTER
July , 2015
Rev .A 1/5



Leshan Radio Company
Leshan Radio Company

LMBTA56LT1G Datasheet Preview

LMBTA56LT1G Datasheet

Driver Transistors PNP Silicon

No Preview Available !

LMBTA56LT1G pdf
LESHAN RADIO COMPANY, LTD.
LMBTA56LT1G,S-LMBTA56LT1G
ELECTRICAL CHARACTERISTICS (Ta= 25)
Characteristic
Symbol
Collector–Emitter Breakdown Voltage(Note 3.) VBR(CEO)
(IC = - 1 mAdc, I B = 0)
Emitter–Base Breakdown Voltage
(I E = -100 μAdc, I C = 0)
VBR(EBO)
Collector Cutoff Current
ICES
(V CE = - 60 Vdc, I E = 0)
Collector Cutoff Current
ICBO
(V CB = - 80 Vdc, I E = 0)
DC Current Gain
hFE
(I C = -10 mAdc, V CE = -1 Vdc)
(I C = -100 mAdc, V CE = -1 Vdc)
Collector–Emitter Saturation Voltage
VCE(sat)
(I C = -100mAdc, I B = -10 mAdc)
Base–Emitter On Voltage
VBE(on)
(I C = -100mAdc, V CE = -1 mAdc)
Current–Gain — Bandwidth Product(Note 4.)
fT
(I C = -100mAdc, V CE= -1Vdc, f = 100MHz)
3. Pulse Test: Pulse Width 300 μs, Duty Cycle2.0%.
4. fT is defined as the frequency at which |hfe | extrapolates to unity.
Min.
-80
-4
100
100
50
Typ. Max.
––
––
-0.1
-0.1
––
––
-0.25
-1.20
––
Unit
V
V
μA
μA
V
V
MHz
TURN−ON TIME
−1.0 V
VCC
+40 V
TURN−OFF TIME +VBB
VCC
+40 V
5.0 ms
+10 V
0
tr = 3.0 ns
100
Vin RB
5.0 mF
100
RL
OUTPUT
* CS t 6.0 pF
5.0 ms
tr = 3.0 ns
100
Vin RB
5.0 mF
100
RL
OUTPUT
* CS t 6.0 pF
*Total Shunt Capacitance of Test Jig and Connectors For PNP Test Circuits, Reverse All Voltage Polarities
Fig. 1 Switching Time Test Circuits
July , 2015
Rev .A 2/5


Part Number LMBTA56LT1G
Description Driver Transistors PNP Silicon
Maker Leshan Radio Company
Total Page 5 Pages
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