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LESHAN RADIO COMPANY, LTD.
General Purpose Transistor
PNP Silicon
z We declare that the material of product compliance with RoHS requirements.
Ordering Information
LMBTA70LT1G
Device LMBTA70LT1G LMBTA70LT3G
Marking M2C M2C
Shipping 3000/Tape&Reel 10000/Tape&Reel
MAXIMUM RATINGS
Rating
Symbol
Collector–Emitter Voltage
V CEO
Emitter–Base Voltage
V EBO
Collector Current — Continuous I C
Value –40 –4.0 –100
Unit Vdc Vdc mAdc
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR– 5 Board, (1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature
Symbol PD
RθJA PD
RθJA TJ , Tstg
Max Unit 225 mW
1.
LMBTA70LT1G Datasheet
