LMBTH10QLT1
LMBTH10QLT1 is Transistors manufactured by Leshan Radio Company.
LESHAN RADIO PANY, LTD.
VHF/UHF Transistors
COLLECTOR
BASE
EMITTER
MAXIMUM RATINGS
Rating .. Collector- Emitter Voltage Collector- Base Voltage Emitter- Base Voltage Symbol V V V
CEO CBO EBO
Value 25 30 3.0
Unit Vdc Vdc Vdc
SOT-23
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR- 5 Board, (1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RθJA PD 556 300 2.4 RθJA TJ , Tstg 417
- 55 to +150 Unit m W m W/°C °C/W m W m W/°C °C/W °C
DEVICE MARKING
LMBTH10QLT1 = 3EQ
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector- Emitter Breakdown Voltage (I C = 1.0 m Adc, I B= 0 ) Collector- Base Breakdown Voltage (I C = 100 µAdc , I E = 0) Emitter- Base Breakdown Voltage (I E = 10 µAdc , I C= 0) Collector Cutoff Current ( V CB = 25Vdc , I E = 0 ) Emitter Cutoff Current ( V EB = 2.0Vdc , I C= 0 ) 1. FR- 5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. V (BR)CBO V (BR)EBO I CBO I EBO 30 3.0
- -
- -
- - 100 100 Vdc Vdc n Adc n Adc V (BR)CEO 25
- - Vdc
- -
LMBTH10QLT1- 1/5
LESHAN RADIO PANY, LTD.
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Typ Max Unit
ON CHARACTERISTICS
DC Current Gain (I C = 4.0 m Adc, V CE = 10 Vdc) Collector- Emitter Saturation Voltage .. (I C = 4.0m Adc, I B = 0.4 m Adc) Base- Emitter On Voltage (I C = 4.0m Adc, V CE = 10Vdc) h FE VCE(sat) V BE
- -
- - 0.5 0.95
Vdc Vdc
- -...