• Part: LMBTH10WT1
  • Description: Transistors
  • Category: Transistor
  • Manufacturer: Leshan Radio Company
  • Size: 211.61 KB
Download LMBTH10WT1 Datasheet PDF
Leshan Radio Company
LMBTH10WT1
LMBTH10WT1 is Transistors manufactured by Leshan Radio Company.
LESHAN RADIO PANY, LTD. VHF/UHF Transistors 3 COLLECTOR 1 BASE 2 EMITTER MAXIMUM RATINGS Rating Collector- Emitter Voltage Collector- Base Voltage Emitter- Base Voltage Symbol V V V CEO CBO EBO 1 2 Value 25 30 3.0 Unit Vdc Vdc Vdc SC-70/SOT- 323 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR- 5 Board, (1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature .. Symbol PD Max 225 1.8 RθJA PD 556 300 2.4 RθJA TJ , Tstg 417 - 55 to +150 Unit m W m W/°C °C/W m W m W/°C °C/W °C DEVICE MARKING LMBTH10WT1 = 3E ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector- Emitter Breakdown Voltage (I C = 1.0 m Adc, I B= 0 ) Collector- Base Breakdown Voltage (I C = 100 µAdc , I E = 0) Emitter- Base Breakdown Voltage (I E = 10 µAdc , I C= 0) Collector Cutoff Current ( V CB = 25Vdc , I E = 0 ) Emitter Cutoff Current ( V EB = 2.0Vdc , I C= 0 ) 1. FR- 5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. V (BR)CBO V (BR)EBO I CBO I EBO 30 3.0 - - - - - - 100 100 Vdc Vdc n Adc n Adc V (BR)CEO 25 - - Vdc - - LMBTH10W- 1/5 LESHAN RADIO PANY, LTD. ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Typ Max Unit ON CHARACTERISTICS DC Current Gain (I C = 4.0 m Adc, V CE = 10 Vdc) Collector- Emitter Saturation Voltage (I C = 4.0m Adc, I B = 0.4 m Adc) Base- Emitter On Voltage (I C = 4.0m Adc, V CE = 10Vdc) h FE VCE(sat) V BE 60 - - - - - 270 0.5 0.95 - Vdc Vdc .. SMALL- SIGNAL CHARACTERISTICS Current Gain- Bandwidth Product (V CE = 10 Vdc, I C = 4.0m Adc, f = 100MHz) Collector - Base Capacitance (V CB = 10 Vdc, I E = 0, f = 1.0 MHz)...