LP2301LT1G Description
LESHAN RADIO PANY, LTD. 20V P-Channel Enhancement-Mode MOSFET VDS= -20V RDS(ON), Vgs@-4.5V, Ids@-2.8A = 100 mΩ RDS(ON), Vgs@-2.5V, Ids@-2.0A = 150 mΩ.
LP2301LT1G Key Features
- 2.4 -1.2
LP2301LT1G is 20V P-Channel Enhancement-Mode MOSFET manufactured by Leshan Radio Company.
LESHAN RADIO PANY, LTD. 20V P-Channel Enhancement-Mode MOSFET VDS= -20V RDS(ON), Vgs@-4.5V, Ids@-2.8A = 100 mΩ RDS(ON), Vgs@-2.5V, Ids@-2.0A = 150 mΩ.