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Leshan Radio Company

LRB425LT1G Datasheet Preview

LRB425LT1G Datasheet

SCHOTTKY BARRIER DIODE

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LESHAN RADIO COMPANY, LTD.
Schottky barrier diode
!Applications
Low power rectification
!Features
1) Small surface mounting type. (SMD3)
2) Low VF. (VF=0.45V Typ. at 100mA)
3) High reliability.
4) We declare that material of product compliance
with ROHS requirements.
!Construction
Silicon epitaxial planar
LRB425LT1G
3
1
2
SOT-23
3
12
! DEVICE MARKING AND ORDERING INFORMATION
Device
LRB425LT1G
Marking
D3L
Shipping
3000/Tape&Reel
LRB425LT3G D3L 10000/Tape&Reel
!Absolute maximum ratings (Ta = 25°C)
Parameter
Peak reverse voltage
DC reverse voltage
Mean rectifying current
Peak forward surge curren
Junction temperature
Storage temperature
Symbol
VRM
VR
IO
IFSM
Tj
Tstg
60Hz for 1
Limits
40
40
0.1
1
125
40~+125
Unit
V
V
A
A
°C
°C
!Electrical characteristics (Ta = 25°C)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Forward voltage
VF1 − − 0.55 V IF=100mA
Forward voltage
VF2 − − 0.34 V IF=10mA
Reverse current
IR − − 30 µA VR=10V
Capacitance between terminals
CT
6.0 pF VR=10V, f=1MHz
Note) ESD sensitive product handling required.
Rev.O 1/3




Leshan Radio Company

LRB425LT1G Datasheet Preview

LRB425LT1G Datasheet

SCHOTTKY BARRIER DIODE

No Preview Available !

LESHAN RADIO COMPANY, LTD.
LRB425LT1G
Electrical characteristic curves (Ta = 25°C)
1
100m
Typ.
pulse measurement
10m
1m
100µ
10µ
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7
FORWARD VOLTAGE : VF (V)
Fig. 1 Forward characteristics
10m
Typ.
pulse measurement
1m Ta=125°C
100µ
10µ
1µ
75°C
25°C
0.1µ
0
5 10 15 20 25 30
REVERSE VOLTAGE : VR (V)
35
Fig. 2 Reverse characteristics
100
10
1
0.1
0 5 10 15 20 25
REVERSE VOLTAGE : VR (V)
Fig. 3 Capacitance between
terminals characteristics
100
80
60
40
20
0
0 25 50 75 100 125
AMBIENT TEMPERATURE : Ta (°C)
Fig. 4 Derating curve
(mounting on glass epoxy PCBs)
Rev.O 2/3


Part Number LRB425LT1G
Description SCHOTTKY BARRIER DIODE
Maker Leshan Radio Company
Total Page 3 Pages
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