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LESHAN RADIO COMPANY, LTD.
Small-Signal Switching Diode
• Silicon Epitaxial Planar Diode • Fast switching Diode;
especially suited for applications requiring high voltage capability
LSD2004LT1
3
1 2
SOT– 23
DEVICE MARKING
LSD2004LT1=DB5
1 ANODE
3 CATHODE
MAXIMUM RATINGS AND THERMAL CHARACTERISTICS
Characteristic Continuous Reverse Voltage Reverse Breakdown Voltage (I R= 100uA) Reverse Voltage Leakage Current (V R= 240V) (V R= 240V,Tj=150°C) Forward Voltage (I F = 20 mA) (I F = 100 mA) Reverse Recovery Time (I F =30 mA ,Irr=3.0 mA) Capacitance (VF =VR = 0,F=1MHZ) Forward Current (continuous) VF VF Trr C 870 1000 50 5.0 Symbol VR V(BR) MIN 240 300 Max Unit V V
IR IR
100 100
nA uA mV mV mV ns pF
IF
225
mA
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LSD2004LT1 Datasheet
