logo

S-LBAS70BST3G Datasheet, Leshan Radio Company

S-LBAS70BST3G Datasheet, Leshan Radio Company

S-LBAS70BST3G

datasheet Download (Size : 164.37KB)

S-LBAS70BST3G Datasheet

S-LBAS70BST3G diode equivalent, schottky barrier diode.

S-LBAS70BST3G

datasheet Download (Size : 164.37KB)

S-LBAS70BST3G Datasheet

Features and benefits

Low forward current High breakdown voltage Guard ring protected Low diode capacitance. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control C.

Application

Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. APPLICATIONS Ultra high-spee.

Description

Planar Schottky barrier diodes with an integrated guard ring for stress protection.Single diodes and double diodes with different pinning are available. We declare that the material of product compliance with RoHS requirements. ORDERING INFORMATION .

Image gallery

S-LBAS70BST3G Page 1 S-LBAS70BST3G Page 2 S-LBAS70BST3G Page 3

TAGS

S-LBAS70BST3G
SCHOTTKY
BARRIER
DIODE
Leshan Radio Company

Manufacturer


Leshan Radio Company

Related datasheet

S-LBAS70BST1G

S-LBAS70BST5G

S-LBAS70-04LT1G

S-LBAS70-04LT3G

S-LBAS70-05LT1G

S-LBAS70-05LT3G

S-LBAS70-06LT1G

S-LBAS70-06LT3G

S-LBAS70LT1G

S-LBAS70LT3G

S-LBAS16LT1G

S-LBAS16WT1G

S-LBAS20HT1G

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts