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LTP70N06 Datasheet Preview

LTP70N06 Datasheet

N-Channel 60V Power MOSFET

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N-Channel 60V Power MOSFET
Features:
Avalanche Rugged Technology
Rugged Gate Oxide Technology
High di/dt Capability
Improved Gate Charge
Application
Switching
DC-DC converter and DC motor control
UPS
LTP70N06
BVDSS = 60 V,
RDS(ON ) = 14 mΩ,
Typ = 10 mΩ
ID = 70 A
Absolute Maximum Ratings (TA=25Unless Otherwise Noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current *
Source-drain Current
Total Dissipation
TC=25
Operating Junction and Storage Temperature Range
Avalanche Energy with Single Pulse
Thermal Resistance-Junction to Ambient*
Thermal Resistance-Junction to Case
Thermal Resistance-Junction to Case
Symbol
VDSS
VGSS
ID
IDM
ISD
Ptot
TJ, Tstg
EAS
RθJA
RθJCS
RθJC
Limit
60
±20
70
280
70
150
-55 to 175
350
Steady State
38
0.5
1.0
a. Pulse width limited by safe operating area
b. Starting Tj=25, ID=30A, VDD=37.5V
Unit
V
V
A
A
A
W
mJ
/W
/W
/W
Rev.1, Nov. 2010
01Free Datasheet http://www.nDatasheet.com




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LTP70N06 Datasheet Preview

LTP70N06 Datasheet

N-Channel 60V Power MOSFET

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N-Channel 60V Power MOSFET
LTP70N06
Electrical Characteristics (TA =25Unless Otherwise Specified)
Symbol Parameter
STATIC
BVDSS
Drain-Source Breakdown Voltage
VGS(th)
Gate Threshold Voltage
IGSS Gate-Body Leakage
IDSS Zero Gate Voltage Drain Current
RDS(ON)
Drain-Source On-Resistance
GFS(ON)
Forward Transconductance
DYNAMIC
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
Ciss Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
td(on)
tr
Turn-On Delay Time
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf Turn-Off Fall Time
Limit
Min. Typ. Max. Unit
VGS=0V, ID=250µA
60
V
VDS=VGS, ID=250µA
23
4V
VDS=0V, VGS=±25V
±100 nA
VDS=Max Rating, VGS=0V
1 µA
VGS=10V, ID=40A
10 14 mΩ
VDSID ×RDS(ON), ID=35A 20 S
VDD=48V, VGS=10V, ID=70A
VDS=25V, VGS=0V,
f=1MHz
VGS =10V, ID=70A
VDS=30V, RG=10Ω,
RL=0.5Ω
80
28
25
4620
300
100
32
154
102
22
170
4800
50
250
150
90
nC
pF
ns
Source-Drain Diode Ratings and Characteristics
Symbol Characteristic
IS Continuous Source current
ISM Pulsed Source Current
VSD Diode Forward voltage-------------
Min.
------
Typ.
Max.
70
280
1.6
Units
A
V
Test Condition
Integral reverse PN diode in The
MOSFET
IS=70A , VGS = 0V
Note: Pulse test: pulse width <= 300us, duty cycle<= 2%
Rev.1, Nov. 2010
02Free Datasheet http://www.nDatasheet.com


Part Number LTP70N06
Description N-Channel 60V Power MOSFET
Maker Lite-On
Total Page 7 Pages
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