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LTE-4206C - GaAlAs T-1 Standard 3 Infrared Emitting Diode

This page provides the datasheet information for the LTE-4206C, a member of the LTE-4206_Lite GaAlAs T-1 Standard 3 Infrared Emitting Diode family.

Description

The LTE-4206 series are high intensity Gallium Aluminum Arsenide infrared emitting diodes mounted in clear plastic end looking packages.

The LTE-4206 series provides a broad range of intensity selection.

Suffix C-smoke color lens.

Features

  • Selected to specific on-line intensity and radiant intensity ranges. Low cost plastic end looking package. Mechanically and spectrally matched to the LTR-4206 series of phototransistor. The LTE-4206 series are made with Gallium Aluminum Arsenide window layer on Gallium Arsenide infrared emitting diodes. Package Dimensions.

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Datasheet Details

Part number LTE-4206C
Manufacturer Lite-On Technology
File Size 297.61 KB
Description GaAlAs T-1 Standard 3 Infrared Emitting Diode
Datasheet download datasheet LTE-4206C Datasheet
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Full PDF Text Transcription

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GaAlAs T-1 Standard 3 Infrared Emitting Diode LTE-4206/LTE-4206C/LTE-4216/LTE-4216C Features Selected to specific on-line intensity and radiant intensity ranges. Low cost plastic end looking package. Mechanically and spectrally matched to the LTR-4206 series of phototransistor. The LTE-4206 series are made with Gallium Aluminum Arsenide window layer on Gallium Arsenide infrared emitting diodes. Package Dimensions Description The LTE-4206 series are high intensity Gallium Aluminum Arsenide infrared emitting diodes mounted in clear plastic end looking packages. The LTE-4206 series provides a broad range of intensity selection. Suffix C-smoke color lens. Notes: 1. All dimensions are in millimeters (inches). 2. Tolerance is 0.25mm (.010") unless otherwise noted. 3.
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