1KSMBJ56 Overview
Silicon Avalanche Diodes • Available in breakdown voltages from 6.8v. to 160v; specially designed for automotive applications • Response time: 1x10-12.secs (theoretical) • Glass passivated junction • Offers high-surge rating in pact package: bridges the gap between 600W and 1.5KW • Forward surge rating: 100A 8.3ms single half sine wave • Operating temperature: -55°C to +150°C
1KSMBJ56 Key Features
- RoHS pliant
- Available in breakdown voltages from 6.8v. to 160v; specially designed for automotive
