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1N5665A - Silicon Avalanche Diodes

Download the 1N5665A datasheet PDF. This datasheet also covers the 1N5645A variant, as both devices belong to the same silicon avalanche diodes family and are provided as variant models within a single manufacturer datasheet.

Features

  • Hermetically sealed.
  • Breakdown voltage range 6.8 - 200 volts.
  • Glass passivated junction.
  • Excellent clamping capability.
  • Low zener impedance.
  • 100% surge tested.
  • -55°C to +150°C.
  • Uni-polar ® 6.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (1N5645A_Littelfuse.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription

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Silicon Avalanche Diodes 1500 Watt Metal Axial Leaded Transient Voltage Suppressors 1N56 Series FEATURES • Hermetically sealed • Breakdown voltage range 6.8 - 200 volts • Glass passivated junction • Excellent clamping capability • Low zener impedance •100% surge tested •-55°C to +150°C •Uni-polar ® 6 SILICON DIODE ARRAYS Min 31.8 Max 5.33 7.5 9.0 Min 25.4 Max 0.8 5.58 MAXIMUM RATING •Peak Pulse Power (Ppk): 1500 Watts (10 x 1000µs)@25°C (see diagram on page 3 for wave form) •1 watt steady state •Response time: 1 x 10-12 seconds (theoretical) •Operating & storage temperature: -55°C to +150°C MECHANICAL CHARACTERISTICS •Case: Metal hermetically sealed DO-13 package •Terminals: Axial leads, solderable per MIL-STD-202 Method 208 •Solderable leads = 230°C for 10 seconds (1.
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