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AQ3522-01LTG Datasheet Preview

AQ3522-01LTG Datasheet

TVS diode

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TVS Diode Arrays (SPA®Diodes)
Enhanced ESD Discrete TVS Series - AQ3522-01LTG
AQ3522-01LTG, 0.15pF 22kV bidirectional TVS diode
RoHS Pb GREEN
Description
The AQ3522 integrates ultra low capacitance diodes to
provide protection for electronic equipment that may
experience destructive electrostatic discharges (ESD). This
robust component can safely absorb repetitive ESD strikes
above the maximum level specified in the IEC 61000-4-2
international standard (Level 4, ±8kV contact discharge)
without performance degradation. The extremely low
loading capacitance also makes it ideal for protecting high
speed signal pins such as V-By-One®, HDMI, USB3.0,
USB2.0, and IEEE 1394.
Pinout
1
2
Features
• ESD, IEC 61000-4-2,
±22kV contact, ±30kV air
• EFT, IEC 61000-4-4, 40A
(tP=5/50ns)
• Lightning, 2.5A (8/20μs as
defined in IEC 61000-4-5
2nd edition)
• Low capacitance of
0.15pF (TYP) at 3GHz
• ESD, ISO 10605, 330pF
330Ω, ±21kV contact,
±23kV air
• Facilitates excellent signal
integrity
• PPAP capable
• AEC-Q101 qualified
• Halogen free, Lead free
and RoHS compliant
• Moisture Sensitivity Level
(MSL -1)
Functional Block Diagram
Applications
• Ultra-high speed data
lines
• USB 3.1, 3.0, 2.0
• HDMI 2.0, 1.4a, 1.3
• DisplayPort(TM)
• V-by-One®
• LVDS interfaces
• Automotive application
• Consumer, mobile and
portable electronics
• Tablet PC and external
storage with high speed
interfaces
• Applications requiring
high ESD performance in
small packages
©2018 Littelfuse, Inc.
Specifications are subject to change without notice.
Revision: 11/14/18




Littelfuse

AQ3522-01LTG Datasheet Preview

AQ3522-01LTG Datasheet

TVS diode

No Preview Available !

TVS Diode Arrays (SPA®Diodes)
Enhanced ESD Discrete TVS Series - AQ3522-01LTG
Absolute Maximum Ratings
Symbol
Parameter
Value
Units
IPP
Peak Current (tp=8/20μs)
2.5
A
TOP
Operating Temperature
-45 to 150
°C
TSTOR
Storage Temperature
-55 to 150
°C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause
permanent damage to the component. This is a stress only rating and operation of the
component at these or any other conditions above those indicated in the operational
sections of this specification is not implied.
Electrical Characteristics - (TOP=25°C)
Parameter
Symbol
Test Conditions
Min
Reverse Standoff Voltage
VRWM
IR=1μA
Breakdown Voltage
VBR
IR=1mA
8.5
Reverse Leakage Current
ILEAK
VR=5V
Clamp Voltage1
VC
IPP=2.5A, tp=8/20µs, I/O to I/O
Dynamic Resistance2
RDYN
TLP, tp=100ns, I/O to I/O
IEC 61000-4-2 (Contact)
±22
ESD Withstand Voltage1
VESD
IEC 61000-4-2 (Air)
±30
Diode Capacitance1,3
CI/O-I/O
Reverse Bias=0V, f= 3 GHz
Note:
1. Parameter is guaranteed by design and/or component characterization.
2. Transmission Line Pulse (TLP) with 100ns width, 2ns rise time, and average window t1=70ns to t2= 90ns.
3. Package sizes larger than 0201 can add parasitic capacitance, inductance and resistance.
Typ
9.2
0.02
15.5
1.2
0.15
Max
Units
5
V
V
0.1
μA
18
V
kV
kV
pF
Clamping voltage vs. IPP for 8/20μs waveshape
20
15
10
5
0
1
1.5
2
2.5
Peak Pulse Current -IPP (A)
8/20μs Pulse Waveform
110%
100%
90%
80%
70%
60%
50%
40%
30%
20%
10%
0%
0.0
5.0
10.0
15.0
20.0
25.0
30.0
Time (μs)
©2018 Littelfuse, Inc.
Specifications are subject to change without notice.
Revision: 11/14/18


Part Number AQ3522-01LTG
Description TVS diode
Maker Littelfuse
PDF Download

AQ3522-01LTG Datasheet PDF






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