900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






Littelfuse

BTA16-800CW3G Datasheet Preview

BTA16-800CW3G Datasheet

Thyristors

No Preview Available !

Thyristors
Surface Mount – 600V-800V > BTA16-600CW3G, BTA16-800CW3G,
BTA16-600CW3G, BTA16-800CW3G,
Pb
Description
Designed for high performance full−wave ac control
applications where high noise immunity and high
commutating di/dt are required.
Pin Out
CASE 221A
STYLE 4
12
Features
• Blocking Voltage to 800 V
• On-State Current Rating of 16 A RMS at 25°C
Uniform Gate Trigger Currents in Three Quadrants
• High Immunity to dV/dt − 1000 V/µs minimum at 125°C
• Minimizes Snubber Networks for Protection
• Industry Standard TO-220AB Package
• High Commutating dI/dt − 8.5 A/ms minimum at 125°C
• Internally Isolated (2500 VRMS)
• These Devices are Pb−Free and are RoHS Compliant
Functional Diagram
MT2
MT1
G
Additional Information
Datasheet
Resources
Samples
© 2017 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 08/30/17




Littelfuse

BTA16-800CW3G Datasheet Preview

BTA16-800CW3G Datasheet

Thyristors

No Preview Available !

Thyristors
Surface Mount – 600V-800V > BTA16-600CW3G, BTA16-800CW3G,
Maximum Ratings (TJ = 25°C unless otherwise noted)
Rating
Peak Repetitive Off-State Voltage (Note 1)
(Gate Open, Sine Wave 50 to 60 Hz, TJ = -40° to 125°C)
BTA16−600CW3G
BTA16−800CW3G
Symbol
VDRM,
VRRM
On-State RMS Current (Full Cycle Sine Wave, 60 Hz, TC = 80°C)
Peak Non-Repetitive Surge Current
(One Full Cycle Sine Wave, 60 Hz, TC = 25°C)
Circuit Fusing Consideration (t = 8.3 ms)
IT (RMS)
ITSM
I2t
Non−Repetitive Surge Peak Off−State Voltage (TJ = 25°C, t = 10ms)
VDSM/ VRSM
Value
600
800
16
170
120
VDSM/ VRSM
+100
Unit
V
A
A
A²sec
V
Peak Gate Current (TJ = 125°C, t = 20ms)
Peak Gate Power (Pulse Width ≤ 1.0 µs, TC = 80°C)
IGM
PG(AV)
4.0
20
A
W
Average Gate Power (TJ = 125°C)
PG(AV)
1.0
W
Operating Junction Temperature Range
TJ -40 to +125 °C
Storage Temperature Range
Tstg -40 to +125 °C
RMS Isolation Voltage (t = 300 ms, R.H. ≤ 30%, TA = 25°C)
Viso 2500
V
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied.
Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative
potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.
Thermal Characteristics
Rating
Thermal Resistance,
Junction−to−Case (AC)
Junction−to−Ambient
Maximum Lead Temperature for Soldering Purposes, 1/8” from case for
10 seconds
Symbol
R8JC
R8JA
TL
Value
2.5
60
260
Unit
°C/W
°C
© 2017 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 08/30/17


Part Number BTA16-800CW3G
Description Thyristors
Maker Littelfuse
Total Page 7 Pages
PDF Download

BTA16-800CW3G Datasheet PDF

View PDF for Mobile








Similar Datasheet

1 BTA16-800CW3G Thyristors
Littelfuse
2 BTA16-800CW3G Triacs Silicon Bidirectional Thyristors
ON Semiconductor





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy