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BTA25H-600CW3G Datasheet Preview

BTA25H-600CW3G Datasheet

Thyristor

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BTA25H-600CW3G
Thyristors
Surface Mount – 600V > BTA25-600CW3G
Description
Designed for high performance full-wave ac control
applications where high noise immunity and high
commutating di/dt are required.
Pin Out
CASE 221A
STYLE 4
1
2
Features
• Blocking Voltage to 600 V
• On-State Current Rating of 25 A RMS at 95°C
• Uniform Gate Trigger Currents in Three Quadrants
• High Immunity to dV/dt − 500 V/µs minimum at 150°C
• Minimizes Snubber Networks for Protection
• Industry Standard TO-220AB Package
• High Commutating dI/dt − 4.0 A/ms minimum at 150°C
• Internally Isolated (2500 VRMS)
• These are Pb−Free Devices
Functional Diagram
MT 2
MT 1
G
Additional Information
10/29/2018
ESW490-30
Q8025LH5TP
Datasheet
Resources
Samples
© 2019 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 06/17/19




Littelfuse

BTA25H-600CW3G Datasheet Preview

BTA25H-600CW3G Datasheet

Thyristor

No Preview Available !

Thyristors
Surface Mount – 600V > BTA25-600CW3G
Maximum Ratings (TJ = 25°C unless otherwise noted)
Rating
Peak Repetitive Off-State Voltage (Note 1)
(Gate Open, Sine Wave 50 to 60 Hz, TJ = -40° to 150°C)
BTA25H−600CW3G
Symbol
VDRM,
VRRM
On-State RMS Current (Full Cycle Sine Wave, 60 Hz, TC = 95°C)
Peak Non-Repetitive Surge Current
(One Full Cycle Sine Wave, 60 Hz, TC = 25°C)
Circuit Fusing Consideration (t = 8.3 ms)
IT (RMS)
ITSM
I2t
Non−Repetitive Surge Peak Off−State Voltage (TJ = 25°C, t = 8.3 ms)
VDSM/ VRSM
Peak Gate Current (TJ = 150°C, t ≤ 20μs)
IGM
Average Gate Power (TJ = 150°C)
PG(AV)
Operating Junction Temperature Range
TJ
Storage Temperature Range
Tstg
RMS Isolation Voltage (t = 300 ms, R.H. ≤ 30%, TA = 25°C)
Viso
Value
600
25
250
260
VDSM/ VRSM
+100
4.0
0.5
-40 to +125
-40 to +125
2500
Unit
V
A
A
A²sec
V
W
W
°C
°C
V
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied.
Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative
potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.
Thermal Characteristics
Rating
Thermal Resistance,
Junction−to−Case (AC)
Junction−to−Ambient
Maximum Lead Temperature for Soldering Purposes, 1/8” from case for
10 seconds
Symbol
RƟJC
RƟJA
TL
Value
1.8
60
260
Unit
°C/W
°C
© 2019 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 06/17/19


Part Number BTA25H-600CW3G
Description Thyristor
Maker Littelfuse
PDF Download

BTA25H-600CW3G Datasheet PDF






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