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BTB12-800CW3G Datasheet Preview

BTB12-800CW3G Datasheet

Thyristors

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Thyristors
Surface Mount – 800V > BTB12-600CW3G, BTB12-800CW3G
BTB12-600CW3G, BTB12-800CW3G
Pb
Description
Designed for high performance full-wave ac control
applications where high noise immunity and high
commutating di/dt are required.
Pin Out
Features
• Blocking Voltage to 800 V
• On-State Current Rating
of 12 Amperes RMS at
25°C
• Uniform Gate Trigger
Currents in Three
Quadrants
• High Immunity to dV/dt
− 1500 V/µs minimum at
125°C
• Minimizes Snubber
Networks for Protection
• Industry Standard TO-
220AB Package
• High Commutating dI/dt
− 3.0. A/ms minimum at
125°C
• These are Pb−Free
Devices
Functional Diagram
MT 2
MT 1
G
CASE 221A
STYLE 4
12
Additional Information
Datasheet
Resources
Samples
© 2019 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 06/10/19




Littelfuse

BTB12-800CW3G Datasheet Preview

BTB12-800CW3G Datasheet

Thyristors

No Preview Available !

Thyristors
Surface Mount – 800V > BTB12-600CW3G, BTB12-800CW3G
Maximum Ratings (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Peak Repetitive Off-State Voltage (Note 1)
(Gate Open, Sine Wave 50 to 60 Hz, TJ = -40° to 125°C)
BTB12−600BW3G
BTB12−800BW3G
VVDRRRMM,
600
800
V
On-State RMS Current (Full Cycle Sine Wave, 60 Hz, TC = 80°C)
IT (RMS)
12
A
Peak Non-Repetitive Surge Current
(One Full Cycle Sine Wave, 60 Hz, TC= 25°C)
ITSM 120
A
Circuit Fusing Consideration (t = 10 ms)
I2t 78 A²sec
Non−Repetitive Surge Peak Off−State Voltage
(TJ = 25°C, t = 10 ms)
Peak Gate Current (TJ = 125°C, t = 20ms)
Peak Gate Power (Pulse Width ≤ 1.0 µs, TC = 80°C)
Average Gate Power (TJ = 125°C)
Operating Junction Temperature Range
Storage Temperature Range
VDSM/ VRSM
IGM
PGM
PG(AV)
TJ
Tstg
VD+SM1/0V0RSM
4.0
20
1.0
-40 to +125
-40 to +125
V
W
W
W
°C
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied.
Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
1. pVoDRtMenatniadl
VonRRMthfeoraanlol dtyep.eBsloccakninbgevaopltpalgieeds
on a continuous basis. Ratings apply for zero or negative gate voltage; however,
shall not be tested with a constant current source such that the voltage ratings
positive gate voltage shall not
of the devices are exceeded.
be
applied
concurrent
with
negative
Thermal Characteristics
Rating
Thermal Resistance
Junction−to−Case (AC)
Junction−to−Ambient
Maximum Lead Temperature for Soldering Purposes, 1/8” from case for
10 seconds
Symbol
RRƟƟJJAC
TL
Value
2.3
60
260
Unit
°C/W
°C
Electrical Characteristics - OFF (TJ = 25°C unless otherwise noted ; Electricals apply in both directions)
Peak Repetitive Blocking Current
(VD = VDRM = VRRM; Gate Open)
Characteristic
TTJJ
=
=
25°C
125°C
Symbol
IIDRRRMM,
Min
-
-
Typ Max
- 0.005
- 1.0
Unit
mA
Electrical Characteristics - ON (TJ = 25°C unless otherwise noted; Electricals apply in both directions)
Characteristic
Forward On-State Voltage (Note 2) (ITM = ±17 A Peak)
Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 30 Ω)
Holding Current
(VD = 12 V, Gate Open, Initiating Current = ±100 mA)
Latching Current (VD = 12 V, IG = 42 mA)
Gate Trigger Voltage (VD = 12 V, RL = 30 Ω)
Gate Non−Trigger Voltage (TJ = 125°C)
2. Indicates Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%.
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
Symbol
VTM
IGT
IH
IL
VGT
VGD
Min
Typ
Max
Unit
− − 1.55 V
2.0 − 35
2.0 − 35 mA
2.0 − 35
− − 45 mA
− − 50
− − 80 mA
− − 50
0.5 − 1.7
0.5 − 1.1 V
0.5 − 1.1
0.2 −
0.2 −
−V
0.2 −
© 2019 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 06/10/19


Part Number BTB12-800CW3G
Description Thyristors
Maker Littelfuse
Total Page 6 Pages
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