Datasheet Summary
LGB8204ATH 400 V, 18 A N-Channel Ignition IGBT
Agency Approvals
Environmental Approvals
Pinout Diagram
Functional Diagram
Product Summary
Characteristic VCES IC
Value 400 18
Unit V A
Description
This Logic Level Insulated Gate Bipolar Transistor (IGBT) Features monolithic circuitry integrating ESD inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required.
Features
- -
- Voltage Clamp Limits Stress Applied to Load
- Integrated ESD Diode Protection
- New Design Increases Unclamped Inductive
Switching (UIS) Energy Per Area
- Low Threshold Voltage Interfaces Power Loads...