Datasheet Summary
LGB8206ATI & LGB8206ARI 350 V, 20 A N-Channel Ignition IGBT
Agency Approvals
Environmental Approvals
Pinout Diagram
Product Summary
Characteristic VCES IC
Value 350 20
Unit V A
Description
This Logic Level Insulated Gate Bipolar Transistor (IGBT) Features monolithic circuitry integrating ESD inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required.
Features
- Applications
- -
Voltage Clamp Limits Stress Applied to Load
- Integrated ESD Diode Protection
- Low Threshold Voltage Interfaces Power Loads to
Logic or Microprocessor Devices
- Low Saturation Voltage
- High Pulsed...