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MCR12MG Datasheet Preview

MCR12MG Datasheet

Silicon Controlled Rectifiers

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MCR12DG, MCR12MG,
MCR12NG
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
Designed primarily for half-wave ac control applications, such as
motor controls, heating controls, and power supplies; or wherever
half−wave silicon gate−controlled devices are needed.
Features
Blocking Voltage to 800 Volts
On−State Current Rating of 12 Amperes RMS at 80°C
High Surge Current Capability − 100 Amperes
Rugged, Economical TO−220AB Package
Glass Passivated Junctions for Reliability and Uniformity
Minimum and Maximum Values of IGT, VGT an IH Specified for
Ease of Design
High Immunity to dv/dt − 100 V/msec Minimum at 125°C
These are Pb−Free Devices
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value
Peak Repetitive Off−State Voltage (Note 1)
(TJ = −40 to 125°C, Sine Wave,
50 to 60 Hz, Gate Open)
MCR12DG
MCR12MG
MCR12NG
VDRM,
VRRM
400
600
800
Unit
V
On-State RMS Current
(180° Conduction Angles; TC = 80°C)
IT(RMS)
12
A
Peak Non-repetitive Surge Current
(1/2 Cycle, Sine Wave 60 Hz, TJ = 125°C)
ITSM
100
A
Circuit Fusing Consideration (t = 8.33 ms)
I2t
41 A2sec
Forward Peak Gate Power
(Pulse Width 1.0 ms, TC = 80°C)
PGM 5.0 W
Forward Average Gate Power
(t = 8.3 ms, TC = 80°C)
PG(AV)
0.5
W
Average On-State Current
(180° Conduction Angles; TC = 80°C)
IT(AV)
7.8
A
Forward Peak Gate Current
(Pulse Width 1.0 ms, TC = 90°C)
IGM 2.0 A
Operating Junction Temperature Range
TJ −40 to +125 °C
Storage Temperature Range
Tstg −40 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings
apply for zero or negative gate voltage; positive gate voltage shall not be
applied concurrent with negative potential on the anode. Blocking voltages
shall not be tested with a constant current source such that the voltage ratings
of the devices are exceeded.
Littelfuse.com
SCRs
12 AMPERES RMS
400 thru 800 VOLTS
G
AK
MARKING
DIAGRAM
1
23
TO−220
CASE 221A−09
STYLE 3
AY WW
MCR12xG
AKA
A
Y
WW
x
G
AKA
= Assembly Location
= Year
= Work Week
= D, M, or N
= Pb−Free Package
= Diode Polarity
PIN ASSIGNMENT
1 Cathode
2 Anode
3 Gate
4 Anode
ORDERING INFORMATION
Device
MCR12DG
Package
TO−220AB
(Pb−Free)
Shipping
50 Units / Rail
MCR12MG
TO−220AB
(Pb−Free)
50 Units / Rail
MCR12NG
TO−220AB
(Pb−Free)
50 Units / Rail
Specifications subject to change without notice. © 2016 Littelfuse, Inc.
September 19, 2016 − Rev. 6
1
Publication Order Number:
MCR12/D




Littelfuse

MCR12MG Datasheet Preview

MCR12MG Datasheet

Silicon Controlled Rectifiers

No Preview Available !

MCR12DG, MCR12MG, MCR12NG
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance,
Junction−to−Case
Junction−to−Ambient
Maximum Lead Temperature for Soldering Purposes 1/8from Case for 10 Seconds
Symbol
RqJC
RqJA
TL
Value
2.2
62.5
260
Unit
°C/W
°C
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Peak Repetitive Forward or Reverse Blocking Current
(VD = Rated VDRM and VRRM; Gate Open)
ON CHARACTERISTICS
TJ = 25°C
TJ = 125°C
IDRM,
IRRM
mA
− − 0.01
− − 2.0
Peak Forward On−State Voltage (Note 2) (ITM = 24 A)
Gate Trigger Current (Continuous dc) (VD = 12 V; RL = 100 W)
Holding Current (VD = 12 V, Gate Open, Initiating Current = 200 mA)
Latch Current (VD = 12 V, IG = 20 mA)
Gate Trigger Voltage (Continuous dc) (VD = 12 V; RL =100 W)
DYNAMIC CHARACTERISTICS
VTM − − 2.2 V
IGT
2.0 8.0 20
mA
IH 4.0 20 40 mA
IL 6.0 25 60 mA
VGT
0.5 0.65 1.0
V
Critical Rate of Rise of Off−State Voltage
(VD = Rated VDRM, Exponential Waveform, Gate Open, TJ = 125°C)
dv/dt
100 250
V/ms
Repetitive Critical Rate of Rise of On−State Current
IPK = 50 A, Pw = 40 msec, diG/dt = 1 A/msec, Igt = 50 mA
di/dt − − 50 A/ms
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Indicates Pulse Test: Pulse Width v 2.0 ms, Duty Cycle v 2%.
Voltage Current Characteristic of SCR + Current
Anode +
Symbol
VDRM
IDRM
VRRM
IRRM
VTM
IH
Parameter
Peak Repetitive Off State Forward Voltage
Peak Forward Blocking Current
Peak Repetitive Off State Reverse Voltage
Peak Reverse Blocking Current
Peak On State Voltage
Holding Current
IRRM at VRRM
on state
VTM
IH
Reverse Blocking Region
(off state)
Reverse Avalanche Region
Anode −
+ Voltage
IDRM at VDRM
Forward Blocking Region
(off state)
125
120
115
110
105
dc
100
95
30° 60°
90° 180°
90
0 1 2 3 4 5 6 7 8 9 10 11 12
IT(RMS), RMS ON−STATE CURRENT (AMPS)
Figure 1. Typical RMS Current Derating
20
18
16
14
12
10
8
6
4
2
0
0
90°
30°
180°
dc
1 2 3 4 5 6 7 8 9 10 11 12
IT(AV), AVERAGE ON−STATE CURRENT (AMPS)
Figure 2. On−State Power Dissipation
Specifications subject to change without notice. © 2016 Littelfuse, Inc.
September 19, 2016 − Rev. 6
2
Publication Order Number:
MCR12/D


Part Number MCR12MG
Description Silicon Controlled Rectifiers
Maker Littelfuse
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MCR12MG Datasheet PDF






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