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Littelfuse

MG12225WB-BN2MM Datasheet Preview

MG12225WB-BN2MM Datasheet

IGBT

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Power Module
1200V 225A IGBT Module
MG12225WB-BN2MM
RoHS
Features
• IGBT3 CHIP(Trench+Field
Stop technology)
• Low saturation voltage
and positive temperature
coefficient
• Fast switching and short
tail current
• F ree wheeling diodes
with fast and soft reverse
recovery
• Temperature sense
included
Applications
• AC motor control
• M otion/servo control
• Photovoltaic/Fuel cell
• Inverter and power
supplies
Module Characteristics (TJ = 25°C, unless otherwise specified)
Symbol
TJ max
TJ op
Tstg
Visol
CTI
Torque
Torque
Weight
Parameters
Max. Junction Temperature
Operating Temperature
Storage Temperature
Insulation Test Voltage
Comparative Tracking Index
Module-to-Sink
Module Electrodes
Test Conditions
AC, t=1min
Recommended (M5)
Recommended (M6)
Min
Typ
Max
150
-40
125
-40
125
3000
250
2.5
5
3
5
350
Unit
°C
°C
°C
V
N·m
N·m
g
Absolute Maximum Ratings (TJ = 25°C, unless otherwise specified)
Symbol
IGBT
VCES
VGES
IC
ICM
Ptot
Diode
VRRM
IF(AV)
Parameters
Collector - Emitter Voltage
Gate - Emitter Voltage
DC Collector Current
Repetitive Peak Collector Current
Power Dissipation Per IGBT
Repetitive Reverse Voltage
Average Forward Current
IFRM
Repetitive Peak Forward Current
I2t
Test Conditions
TJ=25°C
TC=25°C
TC=80°C
tp=1ms
TJ=25°C
TC=25°C
TC=80°C
tp=1ms
TJ =125°C, t=10ms, VR=0V
MG12225WB-BN2MM
1152
Values
1200
±20
325
225
450
1050
1200
225
160
450
9100
Unit
V
V
A
A
A
W
V
A
A
A
A2s
©2016 Littelfuse, Inc
Specifications are subject to change without notice.
Revised:10/05/16




Littelfuse

MG12225WB-BN2MM Datasheet Preview

MG12225WB-BN2MM Datasheet

IGBT

No Preview Available !

Power Module
1200V 225A IGBT Module
Electrical and Thermal Specifications (TJ = 25°C, unless otherwise specified)
Symbol
IGBT
VGE(th)
VCE(sat)
IICES
IGES
RGint
Qge
Cies
Cres
td(on)
tr
td(off)
tf
Eon
Eoff
ISC
RthJC
Diode
VF
tRR
IRRM
Erec
RthJCD
Parameters
Test Conditions
Gate - Emitter Threshold Voltage
Collector - Emitter
Saturation Voltage
Collector Leakage Current
Gate Leakage Current
Integrated Gate Resistor
VCE=VGE, IC=9mA
IC=225A, VGE=15V, TJ=25°C
IC=225A, VGE=15V, TJ=125°C
VCE=1200V, VGE=0V, TJ=25°C
VCE=1200V, VGE=0V, TJ=125°C
VCE=0V, VGE=±15V, TJ=125°C
Gate Charge
Input Capacitance
Reverse Transfer Capacitance
VCE=600V, IC=225A , VGE=±15V
VCE=25V, VGE=0V, f =1MHz
Turn - on Delay Time
TJ=25°C
TJ=125°C
Rise Time
Turn - off Delay Time
Fall Time
Turn - on Energy
VCC=600V
IC=225A
RG =3.3Ω
VGE=±15V
Inductive Load
TJ=25°C
TJ=125°C
TJ=25°C
TJ=125°C
TJ=25°C
TJ=125°C
TJ=25°C
TJ=125°C
Turn - off Energy
TJ=25°C
TJ=125°C
Short Circuit Current
tpsc≤10μS , VGE=15V; TJ=125°C , VCC=900V
Junction-to-Case Thermal Resistance (Per IGBT)
Forward Voltage
Reverse Recovery Time
Max. Reverse Recovery Current
Reverse Recovery Energy
IF=225A, VGE=0V, TJ =25°C
IF=225A, VGE=0V, TJ =125°C
IF=225A, VR=600V
diF/dt=-3600A/µs
TJ=125°C
Junction-to-Case Thermal Resistance (Per Diode)
Min
5.0
-400
Typ
5.8
1.7
2.0
3.3
2.1
16
0.75
160
170
45
50
460
530
100
150
9
13.5
22.5
33
900
1.65
1.6
200
180
18
Max
6.5
1
5
400
0.12
0.2
Unit
V
V
V
mA
mA
nA
Ω
μC
nF
nF
ns
ns
ns
ns
ns
ns
ns
ns
mJ
mJ
mJ
mJ
A
K/W
V
V
ns
A
mJ
K/W
NTC Characteristics (TJ = 25°C, unless otherwise specified)
Symbol
R25
B25/50
Parameters
Resistance
Test Conditions
Tc=25°C
Min
Typ
Max
5
3375
Unit
K
MG12225WB-BN2MM
1253
©2016 Littelfuse, Inc
Specifications are subject to change without notice.
Revised:10/05/16



Part Number MG12225WB-BN2MM
Description IGBT
Maker Littelfuse
Total Page 3 Pages
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MG12225WB-BN2MM Datasheet PDF





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