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Littelfuse

SLVU2.8-4 Datasheet Preview

SLVU2.8-4 Datasheet

TVS Diode Arrays

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TVS Diode Arrays (SPA® Diodes)
Lightning Surge Protection - SLVU2.8-4 Series
SLVU2.8-4 Series 2.8V 40A TVS Array
Pinout
432 1
567
Functional Block Diagram
Pin 1.3
8
Pin 6.8
Pin 2.4
Additional Information
Pin 5.7
Datasheet
Resources
Samples
RoHS Pb GREEN
Description
The SLVU2.8-4 was designed to protect low voltage,
CMOS devices from ESD and lightning induced transients.
There is a compensating diode in series with each low
voltage TVS to present a low loading capacitance to the line
being protected. These robust structures can safely absorb
repetitive ESD strikes at ±30kV (contact discharge) per IEC
61000-4-2 standard and each structure can safely dissipate
up to 40A (IEC 61000-4-5 2nd edition, tP=8/20μs) with very
low clamping voltages.
Features
• ESD, IEC 61000-4-2,
±30kV contact, ±30kV air
• EFT, IEC 61000-4-4, 40A
(5/50ns)
• Lightning, IEC 61000-4-5
2nd edition, 40A (8/20μs)
• Low capacitance of 2pF
per line
• Low leakage current of
1μA (MAX) at 2.8V
• SOIC-8 (JEDEC MO-012)
pin configuration allows
for simple flow-through
layout
• RoHS Compliant and
Lead Free
• Moisture Sensitivity Level
(MSL-1)
Applications
• 10/100/1000 Ethernet
• WAN/LAN Equipment
• Switching Systems
• Desktops, Servers, and
Notebooks
• Analog Inputs
• Base Stations
Application Example
RJ-45
Connector
J1
J8
Case GND
SLVU2.8-4
Device is shown
as transparent
for actual footprint
Ethernet
PHY
Tx+
Tx-
Rx+
Rx-
© 2017 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 02/23/17




Littelfuse

SLVU2.8-4 Datasheet Preview

SLVU2.8-4 Datasheet

TVS Diode Arrays

No Preview Available !

TVS Diode Arrays (SPA® Diodes)
Lightning Surge Protection - SLVU2.8-4 Series
Electrical Characteristics (TOP = 25°C)
Parameter
Reverse Standoff Voltage
Reverse Breakdown Voltage
Snap Back Voltage
Reverse Leakage Current
Clamping Voltage1
Clamping Voltage1
ESD Withstand Voltage1
Symbol
VRWM
VBR
VSB
ILEAK
VC
VC
VESD
Test Conditions
IR≤1μA
IT=2μA
IT=50mA
VR=2.8V (Each Line)
IPP=5A, tP=8/20μs (Each Line)
IPP=24A, tP=8/20μs (Each Line)
IEC61000-4-2 (Contact)
IEC61000-4-2 (Air)
Dynamic Resistance
RDYN
(VC2 - VC1) / (IPP2 - IPP1) (Each Line)
Diode Capacitance1
CD VR=0V, f=1MHz (Each Line)
Note: 1Parameter is guaranteed by design and/or device characterization.
Min
3.0
2.8
±30
±30
Typ
Max
Units
2.8 V
V
V
1 μA
7.0 8.5 V
13.9 15.0
V
kV
kV
0.4 Ω
2.0 2.5 pF
Absolute Maximum Ratings
Parameter
Peak Pulse Power (tP=8/20µs)
Peak Pulse Current (tP=8/20µs)
Operating Temperature
Storage Temperature
Rating
600
40
–40 to 125
–55 to 150
Units
W
A
ºC
ºC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause
permanent damage to the device. This is a stress only rating and operation of the device
at these or any other conditions above those indicated in the operational sections of this
specification is not implied.
Figure 1: Capacitance vs. Reverse Voltage
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.0 0.5 1.0 1.5 2.0
DC Bias (V)
2.5
Figure 2: Clamping Voltage vs. IPP
14
12
10
8
6
4
2
0
0
5 10 15 20
Peak Pulse Current-IPP (A)
25
Figure 3: 8/20 µs Pulse Waveform
110%
100%
90%
80%
70%
60%
50%
40%
30%
20%
10%
0%
0.0
5.0
10.0
15.0
20.0
25.0
30.0
Time (μs)
© 2017 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 02/23/17


Part Number SLVU2.8-4
Description TVS Diode Arrays
Maker Littelfuse
Total Page 4 Pages
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